Surface morphology and roughness of Cu thin films prepared by ionized cluster beam deposition

	Surface morphology and roughness of Cu thin films prepared by ionized cluster beam deposition
	Cao, Bo; Yang, Tongrui; Li, Gongping; Cho, Seong Jin; Kim, Hee
	2012
会议名称	2012 International Conference on Frontiers of Advanced Materials and Engineering Technology, FAMET 2012
会议日期	January 4, 2012 - January 5, 2012
会议地点	Xiamen, China
关键词	Surface morphology Atomic force microscopy Chemical modification Copper Deposition Engineering technology Ionization Ions Morphology Semiconducting silicon compounds Surface roughness Surfaces Thin films Vapor deposition Acceleration voltages Average grain size Cu Films Cu thin film Deposition conditions Ionized cluster beam deposition Ionized cluster beams P-type Si
卷号	430-432
页码	419-422
通讯作者	Cao, B. (caobo@ncepu.edu.cn)
会议录	Advanced Materials Research
会议录出版地	Clausthal-Zellerfeld
学科主题	Classical Physics; Relativity; Engineering Graphics; Engineering Standards; Engineering Profession;Chemical Operations; Materials Science;Chemical Reactions; Chemistry
语种	英语
ISSN号	1022-6680
内容类型	会议论文
源URL	[http://ir.lzu.edu.cn/handle/262010/184912]
专题	核科学与技术学院_会议论文
推荐引用方式 GB/T 7714	Cao, Bo,Yang, Tongrui,Li, Gongping,et al. Surface morphology and roughness of Cu thin films prepared by ionized cluster beam deposition[C]. 见:2012 International Conference on Frontiers of Advanced Materials and Engineering Technology, FAMET 2012. Xiamen, China. January 4, 2012 - January 5, 2012.