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CORC

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Charge trapping effect in HfO2-based high-k gate dielectric stacks after heavy ion irradiation: The role of oxygen vacancy 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 459, 页码: 143-147
作者:  Li, Zongzhen;  Liu, Tianqi;  Bi, Jinshun;  Yao, Huijun;  Zhang, Zhenxing
收藏  |  浏览/下载：32/0  |  提交时间：2022/01/19
Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 778, 期号: 无, 页码: 579-587
作者:  Wang, Die;  He, Gang;  Liang, Shuang;  Liu, Mao
收藏  |  浏览/下载：56/0  |  提交时间：2020/03/31
Snse2 field-effect transistor with high on/off ratio and polarity-switchable photoconductivity 期刊论文
Nanoscale research letters, 2019, 卷号: 14, 期号: 1
作者:  Xu,Hong;  Xing,Jie;  Huang,Yuan;  Ge,Chen;  Lu,Jinghao
收藏  |  浏览/下载：145/0  |  提交时间：2019/05/09
Low-temperature fabrication of HfAlO alloy dielectric using atomic-layer deposition and its application in a low-power device 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 792, 页码: 543-549
作者:  Ma, Pengfei;  Sun, Jiamin;  Zhang, Guanqun;  Liang, Guangda;  Xin, Qian
收藏  |  浏览/下载：14/0  |  提交时间：2019/12/11
High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:  Yang YM(杨育梅)
收藏  |  浏览/下载：6/0  |  提交时间：2020/11/13
High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:  Yang, Yumei;  Lou, Haijun;  Lin, Xinnan
收藏  |  浏览/下载：10/0  |  提交时间：2019/11/15
Polymer/Silicon Nanoparticle Hybrid Layer as High-k Dielectrics in Organic Thin-Film Transistors 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 卷号: 122, 期号: 21, 页码: 11214-11221
作者:  Wang, Xuesong;  Wang, He;  Li, Yao;  Shi, Zuosen;  Yan, Donghang
收藏  |  浏览/下载：44/0  |  提交时间：2019/04/09
Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 4, 页码: 9
作者:  Jiang, Shanshan;  He, Gang;  Liu, Mao;  Zhu, Li;  Liang, Shuang
收藏  |  浏览/下载：65/0  |  提交时间：2019/06/10
半导体器件的制造方法 专利
专利号: US9899270, 申请日期: 2018-02-20, 公开日期: 2014-06-05
作者:  徐秋霞;  朱慧珑;  许高博;  周华杰;  梁擎擎
收藏  |  浏览/下载：17/0  |  提交时间：2019/03/27
The total ionizing dose effect on SiO2 and new high-k gate dielectrics under gamma-ray irradiation 会议论文
作者:  Ding, Man;  Cheng, Yonghong
收藏  |  浏览/下载：13/0  |  提交时间：2019/11/19

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