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Snse2 field-effect transistor with high on/off ratio and polarity-switchable photoconductivity
Xu,Hong1,2; Xing,Jie1; Huang,Yuan2; Ge,Chen2; Lu,Jinghao1; Han,Xu1; Du,Jianyu2; Hao,Huiying1; Dong,Jingjing1; Liu,Hao1
刊名Nanoscale research letters
2019-01-09
卷号14期号:1
关键词Field-effect transistor Snse2 Photoconductivity On/off ratio
ISSN号1931-7573
DOI10.1186/s11671-019-2850-0
通讯作者Xing,jie(xingjie@cugb.edu.cn) ; Huang,yuan(yhuang01@iphy.ac.cn)
英文摘要Abstractsnse2 field-effect transistor was fabricated based on exfoliated few-layered snse2 flake, and its electrical and photoelectric properties have been investigated in detail. with the help of a drop of de-ionized (di) water, the snse2 fet can achieve an on/off ratio as high as ~?104 within 1?v bias, which is ever extremely difficult for snse2 due to its ultrahigh carrier density (1018/cm3). moreover, the subthreshold swing and mobility are both improved to ~?62?mv/decade and ~?127?cm2?v?1?s?1 at 300?k, which results from the efficient screening by the liquid dielectric gate. interestingly, the snse2 fet exhibits a gate bias-dependent photoconductivity, in which a competition between the carrier concentration and the mobility under illumination plays a key role in determining the polarity of photoconductivity.
语种英语
出版者Springer US
WOS记录号BMC:10.1186/S11671-019-2850-0
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2373540
专题物理研究所
通讯作者Xing,Jie; Huang,Yuan
作者单位1.
2.
推荐引用方式
GB/T 7714
Xu,Hong,Xing,Jie,Huang,Yuan,et al. Snse2 field-effect transistor with high on/off ratio and polarity-switchable photoconductivity[J]. Nanoscale research letters,2019,14(1).
APA Xu,Hong.,Xing,Jie.,Huang,Yuan.,Ge,Chen.,Lu,Jinghao.,...&Liu,Hao.(2019).Snse2 field-effect transistor with high on/off ratio and polarity-switchable photoconductivity.Nanoscale research letters,14(1).
MLA Xu,Hong,et al."Snse2 field-effect transistor with high on/off ratio and polarity-switchable photoconductivity".Nanoscale research letters 14.1(2019).
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