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| Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27
作者: Mao, Wei; Wang, Hai-Yong; Shi, Peng-Hao; Wang, Xiao-Fei; Du, Ming
  收藏 | 浏览/下载：4/0 | 提交时间：2019/11/19
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| A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 160-168
作者: Fu, Chen; Lin, Zhaojun; Cui, Peng; Lv, Yuanjie; Zhou, Yang
收藏 | 浏览/下载：5/0 | 提交时间：2019/12/11
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| Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors 期刊论文
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2018, 卷号: 123, 页码: 223-227
作者:
收藏 | 浏览/下载：2/0 | 提交时间：2019/12/11
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| Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 期号: 3, 页码: 1038-1044
作者:
收藏 | 浏览/下载：2/0 | 提交时间：2019/12/11
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| Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9
作者:
收藏 | 浏览/下载：5/0 | 提交时间：2019/12/11
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| Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 12
作者:
收藏 | 浏览/下载：13/0 | 提交时间：2019/12/11
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| Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 103, 页码: 113-120
作者:
收藏 | 浏览/下载：5/0 | 提交时间：2019/12/11
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| Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 111, 页码: 806-815
作者:
收藏 | 浏览/下载：3/0 | 提交时间：2019/12/11
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| A method to determine electron mobility of the two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 110, 页码: 289-295
作者:
收藏 | 浏览/下载：3/0 | 提交时间：2019/12/11
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| Influence of gate width on gate-channel carrier mobility in AlGaN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 111, 页码: 65-72
作者:
收藏 | 浏览/下载：6/0 | 提交时间：2019/12/12
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