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1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation 期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 176, 期号: 11-12, 页码: 1202-1214
作者:  Zhang, RQ (Zhang, Ruiqin) [1] , [2] , [3];  Zheng, QW (Zheng, Qiwen) [1] , [2];  Lu, W (Lu, Wu) [1] , [2];  Cui, JW (Cui, Jiangwei) [1] , [2];  Li, YD (Li, Yudong) [1] , [2]
收藏  |  浏览/下载:21/0  |  提交时间:2022/04/07
Multiple Layout-Hardening Comparison of SEU-Mitigated Filp-Flops in 22-nm UTBB FD-SOI Technology 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 1, 页码: 374-381
作者:  Cai, Chang;  Liu, Tianqi;  Zhao, Peixiong;  Fan, Xue;  Huang, Hongyang
收藏  |  浏览/下载:23/0  |  提交时间:2022/01/19
Development of a new high-speed readout system for soi pixel detectors 期刊论文
Nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 2019, 卷号: 924, 页码: 480-484
作者:  Nishimura, Ryutaro;  Arai, Yasuo;  Miyoshi, Toshinobu;  Hirano, Keiichi;  Kishimoto, Shunji
收藏  |  浏览/下载:59/0  |  提交时间:2019/04/22
Development of a new high-speed readout system for soi pixel detectors 期刊论文
Nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 2019, 卷号: 924, 页码: 480-484
作者:  Nishimura, Ryutaro;  Arai, Yasuo;  Miyoshi, Toshinobu;  Hirano, Keiichi;  Kishimoto, Shunji
收藏  |  浏览/下载:59/0  |  提交时间:2019/04/22
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ]
收藏  |  浏览/下载:99/0  |  提交时间:2019/05/14
Voltage-Controlled Magnetoelectric Memory Bit-cell Design With Assisted Body-bias in FD-SOI 会议论文
GLSVLSI '19 - PROCEEDINGS OF THE 2019 ON GREAT LAKES SYMPOSIUM ON VLSI, 2019-01-01
作者:  Cai, Hao;  Han, Menglin;  Shan, Weiwei;  Yang, Jun;  Wang, You
收藏  |  浏览/下载:11/0  |  提交时间:2019/12/30
Total dose effects of 28nm FD-SOI CMOS transistors 会议论文
作者:  Kuang Y(匡勇);  Bu JH(卜建辉);  Li B(李博);  Gao LC(高林春);  Liang CP(梁春平)
收藏  |  浏览/下载:26/0  |  提交时间:2019/05/10
Investigation of a novel SOI LDMOS using p plus buried islands in the drift region by numerical simulations 期刊论文
2018, 卷号: 17, 页码: 646-652
作者:  Lei, Jianmei[1];  Hu, Shengdong[2,3];  Yang, Dong[2,3];  Huang, Ye[2,3];  Yuan, Qi[2,3]
收藏  |  浏览/下载:5/0  |  提交时间:2019/11/30
FD-SOI随机掺杂与自加热效应影响器件模型研究 学位论文
2018
作者:  杨江江
收藏  |  浏览/下载:3/0  |  提交时间:2019/11/26
Threshold voltage model of total ionizing irradiated short-channel FD-SOI MOSFETs with Gaussian doping profile 期刊论文
IEEE Transactions on Nuclear Science, 2018, 卷号: 65, 页码: 2679-2690
作者:  Huang, Huixiang;  Wei, Sufen;  Pan, Jinyan;  Xu, Wenbin;  Chen, Chi-Cheng
收藏  |  浏览/下载:6/0  |  提交时间:2019/11/26


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