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浏览/检索结果: 共8条，第1-8条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Direct Observations of Nanofilament Evolution in Switching Processes in HfO2-Based Resistive Random Access Memory by In Situ TEM Studies 期刊论文 ADVANCED MATERIALS, 2017 Li, Chao; Gao, Bin; Yao, Yuan; Guan, Xiangxiang; Shen, Xi; Wang, Yanguo; Huang, Peng; Liu, Lifeng; Liu, Xiaoyan; Li, Junjie; Gu, Changzhi; Kang, Jinfeng; Yu, Richeng 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 ELECTROLYTE-BASED RERAM  CONDUCTIVE FILAMENTS  MEMRISTOR  RRAM  HOLOGRAPHY  OPERATIONS  RESISTANCE  CHANNELS  DEVICES  MODEL   Physical mechanism of resistance switching in the co-doped RRAM 期刊论文 Journal of Semiconductors, 2017, 卷号: Vol.38 No.1, 页码: 014008 作者:  Chen,Junning;  Wang,Feifei;  Jiang,Xianwei;  Lu,Shibin;  Dai,Yuehua 收藏  |  浏览/下载：11/0  |  提交时间：2019/04/22 ELECTROLYTE-BASED RERAM  CONDUCTIVE FILAMENTS  TI/HFO2 INTERFACE  MEMORY  OXIDE  PERFORMANCE  DEVICES   Progress in the Characterizations and Understanding of Conducting Filaments in Resistive Switching Devices 期刊论文 IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2016 Yang, Yuchao; Lu, Wei D. 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 Conducting filament  dynamics  electrochemical reactions  metal nanoclusters  structure  ELECTROCHEMICAL METALLIZATION MEMORY  RESISTANCE-CHANGE MEMORY  ELECTROLYTE-BASED RERAM  SOLID-ELECTROLYTE  BOTTOM ELECTRODE  THIN-FILMS  OXIDE  MEMRISTOR  GROWTH  NANOFILAMENT   Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM 期刊论文 Journal of Semiconductors, 2014, 卷号: 35, 期号: 10, 页码: 60-63 作者:  Sun PX(孙鹏霄);  Liu S(刘肃);  Li L(李泠);  Liu M(刘明) 收藏  |  浏览/下载：4/0  |  提交时间：2015/06/24 ReRAM  Monte Carlo method  growth direction of filament  ion migration rate   Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment 期刊论文 journal of supercritical fluids, 2014 Chang, Kuan-Chang; Chen, Jung-Hui; Tsai, Tsung-Ming; Chang, Ting-Chang; Huang, Syuan-Yong; Zhang, Rui; Chen, Kai-Huang; Syu, Yong-En; Chang, Geng-Wei; Chu, Tian-Jian; Liu, Guan-Ru; Su, Yu-Ting; Chen, Min-Chen; Pan, Jhih-Hong; Liao, Kuo-Hsiao; Tai, Ya-Hsiang; Young, Tai-Fa; Sze, Simon M.; Ai, Chi-Fong; Wang, Min-Chuan; Huang, Jen-Wei 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/11 Supercritical fluid  RRAM  Hydration-dehydration reaction  Tin doping  ELECTROLYTE-BASED RERAM  CONDUCTIVE FILAMENTS  FILM   氧化物基固态电解液类型阻变存储器中导电细丝生长和破灭的实时观测 期刊论文 Advanced Materials, 2012 作者:  吕杭炳;  龙世兵;  刘明;  刘琦 收藏  |  浏览/下载：6/0  |  提交时间：2015/09/22 Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode 期刊论文 ACS Nano, 2010, 卷号: Vol.4 No.10, 页码: 6162 作者:  Long,SB;  Liu,Q;  Liu,M;  Wang,W;  Huo,ZL 收藏  |  浏览/下载：1/0  |  提交时间：2019/04/24 RESISTIVE SWITCHING PROPERTIES  MEMORY APPLICATIONS  MEMRISTOR  MECHANISM  DEVICES  ZRO2   Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode 期刊论文 ACS Nano, 2010, 卷号: Vol.4 No.10, 页码: 6162-6168 作者:  Chen, J.;  Lv, H.;  Liu, Q.;  Niu, J.;  Liu, M. 收藏  |  浏览/下载：3/0  |  提交时间：2019/04/24 conductive filament  metal nanocrystal  nonvolatile memory  resistive switching  solid electrolyte  ZrO2