Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM

	Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM
	Sun PX(孙鹏霄); Liu S(刘肃); Li L(李泠); Liu M(刘明)
刊名	Journal of Semiconductors
	2014-10-15
卷号	35 期号:10 页码:60-63
关键词	ReRAM Monte Carlo method growth direction of filament ion migration rate
ISSN号	16744926
其他题名	Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM
通讯作者	Liu, Su
学科主题	Mathematical Statistics
语种	英语
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/107728]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Sun PX,Liu S,Li L,et al. Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM[J]. Journal of Semiconductors,2014,35(10):60-63.
APA	孙鹏霄,刘肃,李泠,&刘明.(2014).Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM.Journal of Semiconductors,35(10),60-63.
MLA	孙鹏霄,et al."Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM".Journal of Semiconductors 35.10(2014):60-63.