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浏览/检索结果: 共11条，第1-10条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part I-Modeling and Simulation Method 期刊论文 ieee电子器件汇刊, 2013 Jiang, Xiaobo; Wang, Runsheng; Yu, Tao; Chen, Jiang; Huang, Ru 收藏  |  浏览/下载：11/0  |  提交时间：2015/11/10 Auto-correlation function  cross-correlation  line-edge-roughness (LER)  line-width-roughness (LWR)  modeling  variability  INTRINSIC PARAMETER FLUCTUATIONS  VARIABILITY  MOSFETS  DECANANOMETER  PERFORMANCE   Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part II-Experimental Results and Impacts on Device Variability 期刊论文 ieee电子器件汇刊, 2013 Wang, Runsheng; Jiang, Xiaobo; Yu, Tao; Fan, Jiewen; Chen, Jiang; Pan, David Z.; Huang, Ru 收藏  |  浏览/下载：7/0  |  提交时间：2015/11/10 FinFET  line-edge roughness (LER)  line-width roughness (LWR)  nanowire  variability  INTRINSIC PARAMETER FLUCTUATIONS  FINFET MATCHING PERFORMANCE  MOSFETS  DECANANOMETER  NANOWIRES  OXIDATION  NOISE   Back-Gate Bias Dependence of the Statistical Variability of FDSOI MOSFETs With Thin BOX 期刊论文 ieee电子器件汇刊, 2013 Yang, Yunxiang; Markov, Stanislav; Cheng, Binjie; Zain, Anis Suhaila Mohd; Liu, Xiaoyan; Asenov, Asen 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13 Back-gate bias  line edge roughness (LER)  metal gate granularity (MGG)  random dopant fluctuation (RDF)  statistical variability (SV)  thin buried oxide (BOX)  INTRINSIC PARAMETER FLUCTUATIONS  SIMULATION  DECANANOMETER  IMPACT   Investigation on Variability in Metal-Gate Si Nanowire MOSFETs: Analysis of Variation Sources and Experimental Characterization 期刊论文 ieee电子器件汇刊, 2011 Wang, Runsheng; Jing Zhuge; Huang, Ru; Yu, Tao; Zou, Jibin; Kim, Dong-Won; Park, Donggun; Wang, Yangyuan 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/10 Line-edge roughness (LER)  metal-gate work function variation (WFV)  modeling  random dopant fluctuation (RDF)  Si nanowire metal-oxide-semiconductor field-effect transistor (MOSFET) (SNWT)  variability  INTRINSIC PARAMETER FLUCTUATIONS  THRESHOLD VOLTAGE FLUCTUATION  CARRIER TRANSPORT  PERFORMANCE  IMPACT  TRANSISTORS  CMOS  DECANANOMETER  INTEGRATION  MOBILITY   Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs 期刊论文 ieee 纳米技术汇刊, 2011 Yang, Yunxiang; Yu, Shimeng; Zeng, Lang; Du, Gang; Kang, Jinfeng; Zhao, Yuning; Han, Ruqi; Liu, Xiaoyan 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 Dopant-segregated Schottky MOSFETs (DSS-MOSFETs)  line edge roughness (LER)  Schottky barrier (SB)  technology computer-aided design (TCAD) simulation  variations  INTRINSIC PARAMETER FLUCTUATIONS  FINFET MATCHING PERFORMANCE  BARRIER  DECANANOMETER  IMPACT   Investigation of Nanowire Line-Edge Roughness in Gate-All-Around Silicon Nanowire MOSFETs 期刊论文 ieee电子器件汇刊, 2010 Yu, Tao; Wang, Runsheng; Huang, Ru; Chen, Jiang; Zhuge, Jing; Wang, Yangyuan 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 Intrinsic parameter fluctuation  line-edge roughness (LER)  silicon nanowire MOSFET (SNWT)  variability  INTRINSIC PARAMETER FLUCTUATIONS  FINFET MATCHING PERFORMANCE  CARRIER TRANSPORT  CMOS TECHNOLOGY  IMPACT  TRANSISTORS  DEVICES  DECANANOMETER  VARIABILITY  INTEGRATION   Variability in Nano-scale Intrinsic Silicon-on-Thin-Box MOSFETs (SOTB MOSFETs) 其他 2010-01-01 Yang, Yunxiang; Du, Gang; Han, Ruqi; Liu, Xiaoyan 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/13 Intrinsic channel  SOTB  variability  intrinsic parameter fluctuations  ground plane  variability aware design  TCAD  THRESHOLD VOLTAGE  PARAMETER FLUCTUATIONS  SOI MOSFETS  DECANANOMETER   Investigation on the effective immunity to process induced line-edge roughness in silicon nanowire MOSFETs 其他 2010-01-01 Yu, Tao; Ding, Wei; Zhuge, Jing; Zhang, Liangliang; Wang, Runsheng; Ru, Huang 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13 Impact of Line-Edge Roughness on Double-Gate Schottky-Barrier Field-Effect Transistors 期刊论文 ieee电子器件汇刊, 2009 Yu, Shimeng; Zhao, Yuning; Zeng, Lang; Du, Gang; Kang, Jinfeng; Han, Ruqi; Liu, Xiaoyan 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 FinFETs  line-edge roughness (LER)  parameter fluctuations  process variations  Schottky-barrier field-effect transistors (SBFETs)  SRAM stability  INTRINSIC PARAMETER FLUCTUATIONS  FINFET MATCHING PERFORMANCE  YTTERBIUM SILICIDE  SRAM CELLS  MOSFETS  SOURCE/DRAIN  SIMULATION  DEVICES  DECANANOMETER  STABILITY   Random telegraph signal noise in gate-all-around silicon nanowire transistors featuring Coulomb-blockade characteristics 期刊论文 应用物理学快报, 2009 Zhuge, Jing; Zhang, Liangliang; Wang, Runsheng; Huang, Ru; Kim, Dong-Won; Park, Donggun; Wang, Yangyuan 收藏  |  浏览/下载：1/0  |  提交时间：2015/11/10 Coulomb blockade  elemental semiconductors  field effect transistors  nanoelectronics  nanowires  semiconductor device noise  silicon  FIELD-EFFECT TRANSISTORS  SIMULATION  DECANANOMETER  MOSFETS  ENERGY