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科研机构
北京大学 [12]
西安理工大学 [6]
计算技术研究所 [1]
自动化研究所 [1]
合肥物质科学研究院 [1]
内容类型
期刊论文 [17]
其他 [4]
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2020 [1]
2018 [2]
2017 [5]
2016 [4]
2015 [1]
2014 [3]
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Backward Diode Rectifying Behavior in AgCrO2/In2O3
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2020, 卷号: 41
作者:
Li, Chenhui
;
Yang, Bingbing
;
Wei, Renhuai
;
Hu, Ling
;
Tang, Xianwu
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2020/11/26
Backward diode
delafossite
In2O3
transparent
Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET
期刊论文
2018, 卷号: 9
作者:
Yang, Zhaonian
;
Yang, Yuan
;
Yu, Ningmei
;
Liou, Juin J.
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/12/20
band-to-band tunneling (BTBT)
electrostatic discharge (ESD)
tunnel field-effect transistor (TFET)
Silicon-Germanium source
drain (SiGe S
D)
technology computer aided design (TCAD)
Investigation of the Double Current Path Phenomenon in Gate-Grounded Tunnel FET
期刊论文
2018, 卷号: 39, 页码: 103-106
作者:
Yang, Zhaonian
;
Zhang, Yue
;
Yang, Yuan
;
Yu, Ningmei
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/20
Band-to-band tunneling (BTBT)
double current path
electrostatic discharge (ESD)
gate grounded tunnel field-effect transistor (ggTFET)
New Understanding of Random Telegraph Noise Amplitude in Tunnel FETs
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017
Chen, Cheng
;
Huang, Qianqian
;
Zhu, Jiadi
;
Zhao, Yang
;
Guo, Lingyi
;
Huang, Ru
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2017/12/03
Amplitude
annealing process
band-to-band tunneling (BTBT) generation rate
nonuniformity
random dopant fluctuation (RDF)
random telegraph noise (RTN)
source doping concentration
tunnel FET (TFET)
FIELD-EFFECT TRANSISTORS
RANDOM DOPANT FLUCTUATION
LINE-EDGE ROUGHNESS
1/F NOISE
ELECTRICAL NOISE
CMOS DEVICES
VARIABILITY
IMPACT
TFET
A Novel Tunnel FET Design Through Adaptive Bandgap Engineering With Constant Sub-Threshold Slope Over 5 Decades of Current and High I-ON/I-OFF Ratio
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Zhao, Yang
;
Wu, Chunlei
;
Huang, Qianqian
;
Chen, Cheng
;
Zhu, Jiadi
;
Guo, Lingyi
;
Jia, Rundong
;
Lv, Zhu
;
Yang, Yuchao
;
Li, Ming
;
Huang, Ru
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2017/12/03
Band-to-band tunneling (BTBT)
Hetero-structure
self-adaptively current replenishing
sub-threshold slope
tunnel field-effect transistor
Double gate impact ionization MOS transistor: Proposal and investigation
期刊论文
2017, 卷号: 102, 页码: 477-483
作者:
Yang, Zhaonian
;
Zhang, Yue
;
Yang, Yuan
;
Yu, Ningmei
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/12/20
Band-to-band tunneling (BTBT)
Double gate
Impact ionization
IMOS
Leakage current
Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate
期刊论文
2017, 卷号: 12, 页码: 198
作者:
Li, Wei
;
Liu, Hongxia
;
Wang, Shulong
;
Chen, Shupeng
;
Yang, Zhaonian
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/20
Band-to-band tunneling (BTBT)
T-shaped gate
Tunneling field-effect transistor (TFET)
Heterojunction
Impact of source height on the characteristic of U-shaped channel tunnel field-effect transistor
期刊论文
2017, 卷号: 111, 页码: 1226-1232
作者:
Yang, Zhaonian
;
Zhang, Yue
;
Yang, Yuan
;
Yu, Ningmei
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/20
Band-to-band tunneling (BTBT)
Electric field
Tunnel field effect transistor (TFET)
U-shaped channel TFET (U-TFET)
Design Guideline for Complementary Heterostructure Tunnel FETs With Steep Slope and Improved Output Behavior
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2016
Wu, Chunlei
;
Huang, Ru
;
Huang, Qianqian
;
Wang, Jiaxin
;
Wang, Yangyuan
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
Band-to-band tunneling (BTBT)
heterojunction
superlinear onset
complementary tunnel field-effect transistor
FIELD-EFFECT TRANSISTORS
INVERTERS
DEVICES
A Novel Tunnel FET Design With Stacked Source Configuration for Average Subthreshold Swing Reduction
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016
Wu, Chunlei
;
Huang, Qianqian
;
Zhao, Yang
;
Wang, Jiaxin
;
Wang, Yangyuan
;
Huang, Ru
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2017/12/03
Band-to-band tunneling (BTBT)
heterostructure
subthreshold slope
tunnel FET (TFET)
FIELD-EFFECT TRANSISTORS
LOGIC
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