Backward Diode Rectifying Behavior in AgCrO2/In2O3

doi:10.1109/LED.2020.2975005

	Backward Diode Rectifying Behavior in AgCrO2/In2O3
	Li, Chenhui 4,5; Yang, Bingbing 1,4; Wei, Renhuai 4; Hu, Ling 4; Tang, Xianwu 4; Yang, Jie 4; Zhu, Xuebin 4; Sun, Yuping 2,3,4
刊名	IEEE ELECTRON DEVICE LETTERS
	2020-04-01
卷号	41
关键词	Backward diode delafossite In2O3 transparent
ISSN号	0741-3106
DOI	10.1109/LED.2020.2975005
通讯作者	Wei, Renhuai(rhwei@issp.ac.cn) ; Zhu, Xuebin(xbzhu@issp.ac.cn)
英文摘要	A backward diode consisting of all nondegenerate and transparent semiconducting oxides (TSOs) offers promising opportunities for designing multifunctional electronic devices. In this letter, we report the backward diode rectifying behavior in the nondegenerate AgCrO2/In2O3 p-n heterojunction. Both AgCrO2 and In2O3 films are transparent. The decrease of grain boundary in the In2O3 film can improve the backward diode rectifying performance. The optimized AgCrO2/In2O3 heterojunction exhibits a very high reverse rectification ratio that exceeds 10(3) along with a small tunneling current onset voltage. The backward diode rectifying behavior originates from the electron band-to-band tunneling (BTBT) current in the reverse voltage region, which is induced by type-III band alignment. This study will pave the way for achieving transparent backward diodes by using all nondegenerate TSOs p-n heterojunctions.
资助项目	National Natural Science Foundation of China[11604337] ; Key Laboratory of Photovoltaic and Energy Conservation Materials
WOS关键词	FILMS
WOS研究方向	Engineering
语种	英语
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
WOS记录号	WOS:000522206300004
资助机构	National Natural Science Foundation of China ; Key Laboratory of Photovoltaic and Energy Conservation Materials
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/103633]
专题	中国科学院合肥物质科学研究院
通讯作者	Wei, Renhuai; Zhu, Xuebin
作者单位	1.Auhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China 2.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China 3.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China 4.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 5.Univ Sci & Technol China, Sci Isl Branch, Grad Sch, Hefei 230026, Peoples R China
推荐引用方式 GB/T 7714	Li, Chenhui,Yang, Bingbing,Wei, Renhuai,et al. Backward Diode Rectifying Behavior in AgCrO2/In2O3[J]. IEEE ELECTRON DEVICE LETTERS,2020,41.
APA	Li, Chenhui.,Yang, Bingbing.,Wei, Renhuai.,Hu, Ling.,Tang, Xianwu.,...&Sun, Yuping.(2020).Backward Diode Rectifying Behavior in AgCrO2/In2O3.IEEE ELECTRON DEVICE LETTERS,41.
MLA	Li, Chenhui,et al."Backward Diode Rectifying Behavior in AgCrO2/In2O3".IEEE ELECTRON DEVICE LETTERS 41(2020).