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CORC

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A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 160-168
作者:  Fu, Chen;  Lin, Zhaojun;  Cui, Peng;  Lv, Yuanjie;  Zhou, Yang
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9
作者:  Liu, Yan;  Lin, Zhao-Jun;  Lv, Yuan-Jie;  Cui, Peng;  Fu, Chen
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 111, 页码: 806-815
作者:  Fu, Chen;  Lin, Zhaojun;  Liu, Yan;  Cui, Peng;  Lv, Yuanjie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
Chinese Physics B, 2017, 期号: 09, 页码: 393-399
作者:  Liu Y(刘艳);  Lin ZJ(林兆军);  Lv YJ(吕元杰);  Cui P(崔鹏);  Fu C(付晨)
收藏  |  浏览/下载：13/0  |  提交时间：2019/12/12
Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2016, 卷号: 100, 页码: 358-364
作者:  Cui, Peng;  Liu, Huan;  Lin, Zhaojun;  Cheng, Aijie;  Liu, Yan
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/17
Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 85, 页码: 43-49
作者:  Yang, Ming;  Lin, Zhaojun;  Zhao, Jingtao;  Wang, Yutang;  Li, Zhiyuan
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17
A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 79, 页码: 21-28
作者:  Zhao, Jingtao;  Lin, Zhaojun;  Luan, Chongbiao;  Chen, Quanyou;  Yang, Ming
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/17
Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors 期刊论文
Chinese Physics B, 2015, 卷号: 24, 期号: 11, 页码: 410-413
作者:  Yang M(杨铭);  Lin ZJ(林兆军);  Zhao JT(赵景涛);  Wang YT(王玉堂);  Li ZY(李志远)
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17
Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
Superlattices and microstructures, 2015, 页码: 43-49
作者:  Yang, Ming;  Lin, Zhaojun;  Zhao, Jingtao;  Wang, Yutang;  Li, Zhiyuan
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17
A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
Superlattices and microstructures, 2015, 页码: 21-28
作者:  Zhao, Jingtao;  Lin, Zhaojun;  Luan, Chongbiao;  Chen, Quanyou;  Yang, Ming
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/17

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