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	Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors
	Yang, Ming; Lin, Zhaojun; Zhao, Jingtao; Wang, Yutang; Li, Zhiyuan; Lv, Yuanjie; Feng, Zhihong
刊名	Superlattices and microstructures
	2015
页码	43-49
关键词	AlGaN/AlN/GaN HFETs Sapphire substrate thickness Strain
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4770529
专题	山东大学
作者单位	1.Shandong Univ, Sch Phys, Jinan 250100, Peoples R China 2.Shandong Univ, Sch Phys, Jinan 250100, Peoples R China 3.Shandong Univ, Sch
推荐引用方式 GB/T 7714	Yang, Ming,Lin, Zhaojun,Zhao, Jingtao,et al. Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors[J]. Superlattices and microstructures,2015:43-49.
APA	Yang, Ming.,Lin, Zhaojun.,Zhao, Jingtao.,Wang, Yutang.,Li, Zhiyuan.,...&Feng, Zhihong.(2015).Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors.Superlattices and microstructures,43-49.
MLA	Yang, Ming,et al."Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors".Superlattices and microstructures (2015):43-49.

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