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CORC

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Single Event Burnout Hardening of Enhancement Mode HEMTs With Double Field Plates 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 9, 页码: 2358-2366
作者:  Zhen, Zixin;   Feng, Chun;   Wang, Quan;   Niu, Di;   Wang, Xiaoliang;   Tan, Manqing
收藏  |  浏览/下载：9/0  |  提交时间：2022/03/28
Comparative Study of SiC Planar MOSFETs With Different p-Body Designs 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 卷号: 67, 期号: 3, 页码: 1071-1076
作者:  Weijiang Ni ;   Xiaoliang Wang ;   Miaoling Xu ;   Mingshan Li;   Chun Feng;   Hongling Xiao;   Lijuan Jiang;   Wei Li;   Quan Wang
收藏  |  浏览/下载：4/0  |  提交时间：2021/11/05
Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor 期刊论文
Japanese Journal of Applied Physics, 2020, 卷号: 59, 期号: 11, 页码: 111001
作者:  Di Niu;   Quan Wang;   Wei Li;   Changxi Chen;   Jiankai Xu;   Lijuan Jiang;   Chun Feng;   Hongling Xiao;   Qian Wang;   Xiangang Xu;   Xiaoliang Wang
收藏  |  浏览/下载：9/0  |  提交时间：2021/05/24
Influence of Fe in the buffer layer on the laser lift-off of AlGaN/GaN HEMT film: phenomena and mechanism 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 卷号: 35, 期号: 9, 页码: 095024
作者:  Fen Guo;   Quan Wang;   Hongling Xiao;   Lijuan Jiang;   Wei Li;   Chun Feng;   Xiaoliang Wang;  Zhanguo Wang
收藏  |  浏览/下载：52/0  |  提交时间：2021/05/25
Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET 期刊论文
IEEE Electron Device Letters, 2019, 卷号: 40, 期号: 5, 页码: 698-701
作者:  Weijiang Ni ;   Xiaoliang Wang ;   Miaolin Xu;   Quan Wang ;   Chun Feng;   Honglin Xiao;   Lijuan Jiang;   Wei Li
收藏  |  浏览/下载：5/0  |  提交时间：2020/07/30
Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer 期刊论文
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2018, 卷号: 10, 期号: 2, 页码: 185-189
作者:  Meilan Hao ;   Quan Wang ;   Lijuan Jiang ;   Chun Feng ;   Changxi Chen ;   Cuimei Wang ;   Hongling Xiao ;   Fengqi Liu ;   Xiangang Xu ;   Xiaoliang Wang ;   Zhanguo Wang
收藏  |  浏览/下载：34/0  |  提交时间：2019/11/15
Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases 期刊论文
journal of applied physics, 2016, 卷号: 120, 期号: 12, 页码: 124501
Junda Yan; Quan Wang; Xiaoliang Wang; Chun Feng; Hongling Xiao; Shiming Liu; Jiamin Gong; Fengqi Liu; Baiquan Li
收藏  |  浏览/下载：28/0  |  提交时间：2017/03/10
Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes 期刊论文
phys. status solidi a, 2015, 卷号: 212, 期号: 5, 页码: 1158-1161
He Kang; Quan Wang; Hongling Xiao; Cuimei Wang; Lijuan Jiang; Chun Feng; Hong Chen; Haibo Yin; Shenqi Qu; Enchao Peng; Jiamin Gong; Xiaoliang Wang; Baiquan Li; Zhanguo Wang; Xun Hou
收藏  |  浏览/下载：30/0  |  提交时间：2016/03/29
A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor 期刊论文
chin. phys. lett., 2015, 卷号: 32, 期号: 5, 页码: 58501-58504
Lei Cui; Quan Wang; XiaoLiang Wang; HongLing Xiao; CuiMei Wang; LiJuan Jiang; Chun Feng; HaiBo Yin; JiaMin Gong; BaiQuan Li; ZhanGuo Wang
收藏  |  浏览/下载：28/0  |  提交时间：2016/03/29
Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width 期刊论文
journal of applied physics, 2013, 卷号: 114, 期号: 15, 页码: 4507
Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang
收藏  |  浏览/下载：22/0  |  提交时间：2014/03/18

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