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	Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width
	Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang
刊名	journal of applied physics
	2013
卷号	114期号:15页码:4507
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2014-03-18
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24542]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang. Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width[J]. journal of applied physics,2013,114(15):4507.
APA	Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang.(2013).Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width.journal of applied physics,114(15),4507.
MLA	Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang."Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width".journal of applied physics 114.15(2013):4507.

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