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CORC

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Fabrication and Characterization of High-Performance Thin-Film Transistors Based on Epitaxial Ta-Doped TiO2 Films 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 期号: 10, 页码: 4193-4204
作者:  Zhao, Wei;  Lv, Yuanjie;  Feng, Xianjin;  He, Linan;  Xiao, Hongdi
收藏  |  浏览/下载：13/0  |  提交时间：2019/12/11
beta-Ga2O3 epitaxial films deposited on epi-GaN/sapphire (0001) substrates by MOCVD 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 卷号: 77, 页码: 58-63
作者:  Cao, Qiong;  He, Linan;  Xiao, Hongdi;  Feng, Xianjin;  Lv, Yuanjie
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/11
β-Ga2O3epitaxial films deposited on epi-GaN/sapphire (0001) substrates by MOCVD 期刊论文
Materials Science in Semiconductor Processing, 2018, 卷号: 77, 页码: 58-63
作者:  Cao, Qiong;  He, Linan;  Xiao, Hongdi;  Feng, Xianjin;  Lv, Yuanjie
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2018, 卷号: 124, 期号: 5
作者:  Cui, Peng;  Lin, Zhaojun;  Fu, Chen;  Liu, Yan;  Lv, Yuanjie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 160-168
作者:  Fu, Chen;  Lin, Zhaojun;  Cui, Peng;  Lv, Yuanjie;  Zhou, Yang
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors 期刊论文
SCIENTIFIC REPORTS, 2018, 卷号: 8
作者:  Cui, Peng;  Lv, Yuanjie;  Liu, Huan;  Cheng, Aijie;  Fu, Chen
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/11
The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2018, 卷号: 124, 期号: 4
作者:  Fu, Chen;  Lin, Zhaojun;  Cui, Peng;  Lv, Yuanjie;  Zhou, Yang
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/11
Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs 期刊论文
SCIENTIFIC REPORTS, 2018, 卷号: 8
作者:  Cui, Peng;  Lv, Yuanjie;  Fu, Chen;  Liu, Huan;  Cheng, Aijie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
Influence of polarization Coulomb field scattering on high-temperature electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 120, 页码: 389-394
作者:  Liu, Yan;  Lin, Zhaojun;  Cui, Peng;  Fu, Chen;  Lv, Yuanjie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors 期刊论文
SCIENTIFIC REPORTS, 2018, 卷号: 8
作者:  Cui, Peng;  Mo, Jianghui;  Fu, Chen;  Lv, Yuanjie;  Liu, Huan
收藏  |  浏览/下载：1/0  |  提交时间：2019/12/11

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