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CORC

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A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs 期刊论文
RESULTS IN PHYSICS, 2019, 卷号: 13, 期号: 6, 页码: 1-5
作者:  Zhao, JH (Zhao, Jinghao)[ 1,2,3 ];  Zheng, QW (Zheng, Qiwen)[ 1,2 ];  Cui, JW (Cui, Jiangwei)[ 1,2 ];  Zhou, H (Zhou, Hang)[ 1,2,3 ];  Liang, XW (Liang, Xiaowen)[ 1,2,3 ]
收藏  |  浏览/下载：30/0  |  提交时间：2020/03/20
Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 81, 期号: 2, 页码: 112-116
作者:  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Cui, JW (Cui, Jiangwei);  Zheng, QW (Zheng, Qiwen);  Zhou, H (Zhou, Hang)
收藏  |  浏览/下载：56/0  |  提交时间：2018/03/14
Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9, 页码: 1-5
作者:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Liu, MX (Liu, Mengxin);  Su, DD (Su, Dandan);  Zhou, H (Zhou, Hang)
收藏  |  浏览/下载：39/0  |  提交时间：2017/12/05
An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation 期刊论文
CHINESE PHYSICS LETTERS, 2017, 卷号: 34, 期号: 7, 页码: 181-184
作者:  Ma, T (Ma, Teng);  Zheng, QW (Zheng, Qi-Wen);  Cui, JW (Cui, Jiang-Wei);  Zhou, H (Zhou, Hang);  Su, DD (Su, Dan-Dan)
收藏  |  浏览/下载：22/0  |  提交时间：2017/12/14
Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors 期刊论文
CHINESE PHYSICS LETTERS, 2016, 卷号: 33, 期号: 7
作者:  Zheng, QW (Zheng, Qi-Wen);  Cui, JW (Cui, Jiang-Wei);  Zhou, H (Zhou, Hang);  Yu, DZ (Yu, De-Zhao);  Yu, XF (Yu, Xue-Feng)
收藏  |  浏览/下载：25/0  |  提交时间：2016/12/07
Enhanced channel hot carrier effect of 0.13 mu m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 9
作者:  Zhou, H (Zhou Hang);  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Yu, XF (Yu Xue-Feng);  Guo, Q (Guo Qi)
收藏  |  浏览/下载：28/0  |  提交时间：2016/12/12
Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 8
作者:  Zhou, H (Zhou Hang);  Cui, JW (Cui Jiang-Wei);  Zheng, QW (Zheng Qi-Wen);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan)
收藏  |  浏览/下载：24/0  |  提交时间：2018/01/26
Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation 期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 10
作者:  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Zhou, H (Zhou Hang);  Yu, DZ (Yu De-Zhao);  Yu, XF (Yu Xue-Feng)
收藏  |  浏览/下载：15/0  |  提交时间：2017/09/21
Effects of proton and neutron irradiation on dark signal of charge-coupled device 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 19
作者:  Zeng, JZ (Zeng Jun-Zhe);  Li, YD (Li Yu-Dong);  Wen, L (Wen Lin);  He, CF (He Cheng-Fa);  Guo, Q (Guo Qi)
收藏  |  浏览/下载：16/0  |  提交时间：2018/01/24
Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress 期刊论文
CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 12
作者:  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Yu, XF (Yu Xue-Feng);  Guo, Q (Guo Qi);  Zhou, H (Zhou Hang)
收藏  |  浏览/下载：13/0  |  提交时间：2017/09/21

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