An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation | |
Ma, T (Ma, Teng); Zheng, QW (Zheng, Qi-Wen); Cui, JW (Cui, Jiang-Wei); Zhou, H (Zhou, Hang); Su, DD (Su, Dan-Dan); Yu, XF (Yu, Xue-Feng); Guo, Q (Guo, Qi) | |
刊名 | CHINESE PHYSICS LETTERS |
2017 | |
卷号 | 34期号:7页码:181-184 |
ISSN号 | 0256-307X |
DOI | 10.1088/0256-307X/34/7/076104 |
英文摘要 | The effects of proton irradiation on the subsequent time-dependent dielectric breakdown (TDDB) of partially depleted SOI devices are experimentally investigated. It is demonstrated that heavy-ion irradiation will induce the decrease of TDDB lifetime for many device types, but we are amazed to find a measurable increase in the TDDB lifetime and a slight decrease in the radiation-induced leakage current after proton irradiation at the nominal operating irradiation bias. We interpret these results and mechanisms in terms of the effects of radiation-induced traps on the stressing current during the reliability testing, which may be significant to expand the understanding of the radiation effects of the devices used in the proton radiation environment. |
WOS记录号 | WOS:000410696400040 |
内容类型 | 期刊论文 |
源URL | [http://ir.xjipc.cas.cn/handle/365002/5058] |
专题 | 新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室 新疆理化技术研究所_材料物理与化学研究室 |
通讯作者 | Yu, XF (Yu, Xue-Feng) |
作者单位 | 1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China 2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
推荐引用方式 GB/T 7714 | Ma, T ,Zheng, QW ,Cui, JW ,et al. An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation[J]. CHINESE PHYSICS LETTERS,2017,34(7):181-184. |
APA | Ma, T .,Zheng, QW .,Cui, JW .,Zhou, H .,Su, DD .,...&Guo, Q .(2017).An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation.CHINESE PHYSICS LETTERS,34(7),181-184. |
MLA | Ma, T ,et al."An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation".CHINESE PHYSICS LETTERS 34.7(2017):181-184. |
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