Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation

doi:10.1088/1674-1056/24/10/106106

CORC > 新疆理化技术研究所 > 中国科学院新疆理化技术研究所 > 中国科学院特殊环境功能材料与器件重点试验室

	Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation
	Zheng, QW (Zheng Qi-Wen)1; Cui, JW (Cui Jiang-Wei)1; Zhou, H (Zhou Hang)1; Yu, DZ (Yu De-Zhao)1; Yu, XF (Yu Xue-Feng)1 ; Lu, W (Lu Wu)1 ; Guo, Q (Guo Qi)1 ; Ren, DY (Ren Di-Yuan)1
刊名	CHINESE PHYSICS B
	2015
卷号	24 期号:10
关键词	Total Dose Irradiation Static Random Access Memory Functional Failure Mode
DOI	10.1088/1674-1056/24/10/106106
英文摘要	Functional failure mode of commercial deep sub-micron static random access memory (SRAM) induced by total dose irradiation is experimentally analyzed and verified by circuit simulation. We extensively characterize the functional failure mode of the device by testing its electrical parameters and function with test patterns covering different functional failure modes. Experimental results reveal that the functional failure mode of the device is a temporary function interruption caused by peripheral circuits being sensitive to the standby current rising. By including radiation-induced threshold shift and off-state leakage current in memory cell transistors, we simulate the influence of radiation on the functionality of the memory cell. Simulation results reveal that the memory cell is tolerant to irradiation due to its high stability, which agrees with our experimental result.
WOS记录号	WOS:000363327400060
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/4910]
专题	新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室新疆理化技术研究所_材料物理与化学研究室
作者单位	1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China 2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Zheng, QW ,Cui, JW ,Zhou, H ,et al. Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation[J]. CHINESE PHYSICS B,2015,24(10).
APA	Zheng, QW .,Cui, JW .,Zhou, H .,Yu, DZ .,Yu, XF .,...&Ren, DY .(2015).Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation.CHINESE PHYSICS B,24(10).
MLA	Zheng, QW ,et al."Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation".CHINESE PHYSICS B 24.10(2015).