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科研机构
北京大学 [36]
内容类型
其他 [18]
期刊论文 [18]
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2013 [1]
2012 [3]
2011 [8]
2010 [10]
2009 [6]
2008 [8]
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共36条,第1-10条
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专题:北京大学
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Numerical Electron Mobility Model of Nanoscale Symmetric, Asymmetric and Independent Double-Gate MOSFETs
期刊论文
journal of computational and theoretical nanoscience, 2013
He, Jin
;
Xu, Yiwen
;
Chen, Lin
;
Zhang, Lining
;
Zhou, Xingye
;
Ma, Chenyue
;
Cao, Yu
;
Ye, Yun
;
Wang, Cheng
;
Liang, Hailang
;
Chan, Mansun
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/13
DG MOSFETs
Mobility
Phonon Scattering
Surface Roughness Scattering
Symmetric and Asymmetric
Dependent and Independent
SI INVERSION-LAYERS
INTERFACE-ROUGHNESS DEPENDENCE
SURFACE-ROUGHNESS
LIMITED MOBILITY
VOLUME INVERSION
FIELD
PERFORMANCE
TRANSISTORS
DEVICE
CMOS
Parameter Extraction of Nano-Scale MOSFET by a Forward Gated-Diode Method
期刊论文
journal of computational and theoretical nanoscience, 2012
Zhang, Chenfei
;
Shi, Min
;
Zhang, Zhenjuan
;
Sun, Lin
;
Wang, Qiang
;
Ma, Chenyue
;
Guo, Xinjie
;
Zhang, Xiufang
;
He, Jin
;
Chen, Qin
;
Ye, Yun
;
Ma, Yong
;
Wang, Ruonan
;
Wang, Hao
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2015/11/16
Forward Gated-Diode Method
Recombination-Generation Current
Parameter Extraction
MOSFETs
INTERFACE STATE GENERATION
THRESHOLD VOLTAGE
RELIABLE MODEL
TRAPS
Gate Underlap Design for Short Channel Effects Control in Cylindrical Gate-all-around MOSFETs based on an Analytical Model
期刊论文
iete technical review, 2012
Zhang, Lining
;
Wang, Shaodi
;
Ma, Chenyue
;
He, Jin
;
Xu, Chunkai
;
Ma, Yutao
;
Ye, Yun
;
Liang, Hailang
;
Chen, Qin
;
Chan, Mansun
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/13
Conformal mapping
Gate-all-around MOSFET
Gate underlap
Short channel effects
TCAD simulations
SOI MOSFETS
FRINGING FIELDS
SCALING THEORY
DEVICES
Unified Reaction-Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect
期刊论文
日本应用物理学杂志, 2012
Ma, Chenyue
;
Mattausch, Hans Juergen
;
Miyake, Masataka
;
Matsuzawa, Kazuya
;
Iizuka, Takahiro
;
Yamaguchi, Seiichiro
;
Hoshida, Teruhiko
;
Kinoshita, Akinari
;
Arakawa, Takahiko
;
He, Jin
;
Miura-Mattausch, Mitiko
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/11/13
NBTI DEGRADATION
TRAP GENERATION
P-MOSFETS
INTERFACE
ON-state critical gate overdrive voltage for fluorine-implanted enhancement-mode AlGaN/GaN high electron mobility transistors
期刊论文
应用物理杂志, 2011
Ma, Chenyue
;
Chen, Hongwei
;
Zhou, Chunhua
;
Huang, Sen
;
Yuan, Li
;
Roberts, John
;
Chen, Kevin. J.
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/11/10
PLASMA TREATMENT
THRESHOLD VOLTAGE
HEMTS
MODULATION
FIELD
A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection
期刊论文
microelectronics reliability, 2011
Ma, Chenyue
;
Zhang, Lining
;
Zhang, Chenfei
;
Zhang, Xiufang
;
He, Jin
;
Zhang, Xing
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/10
CHARGE-PUMPING MEASUREMENTS
THRESHOLD-VOLTAGE MODEL
MOS-TRANSISTORS
MOSFETS
GENERATION
MECHANISM
NMOSFETS
STRESS
DEVICE
TRAPS
Impact of random dopant fluctuation effect on surrounding gate MOSFETs: from atomic level simulation to circuit performance evaluation
期刊论文
journal of nanoscience and nanotechnology, 2011
Wang Hao
;
Ma Chenyue
;
Zhang Chenfei
;
Hel Jin
;
Liu Zhiwei
;
Lin Xinnan
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/14
Forward gated-diode method for parameter extraction of MOSFETs
期刊论文
journal of semiconductors, 2011
Zhang, Chenfei
;
Ma, Chenyue
;
Guo, Xinjie
;
Zhang, Xiufang
;
He, Jin
;
Wang, Guozeng
;
Yang, Zhang
;
Liu, Zhiwei
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/11/17
A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection
其他
2011-01-01
Ma, Chenyue
;
Zhang, Lining
;
Zhang, Chenfei
;
Zhang, Xiufang
;
He, Jin
;
Zhang, Xing
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2017/12/03
Characteristics sensitivity of FinFET to fin vertical nonuniformity
其他
2011-01-01
Xu, Jiaojiao
;
Ma, Chenyue
;
Zhang, Chenfei
;
Zhang, Xiufang
;
Wu, Wen
;
Cao, Yu
;
Wang, Wenping
;
Ye, Yun
;
Yang, Shengqi
;
Lin, Xinnan
;
He, Jin
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/13
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