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	Characteristics sensitivity of FinFET to fin vertical nonuniformity
	Xu, Jiaojiao ; Ma, Chenyue ; Zhang, Chenfei ; Zhang, Xiufang ; Wu, Wen ; Cao, Yu ; Wang, Wenping ; Ye, Yun ; Yang, Shengqi ; Lin, Xinnan ; He, Jin
	2011
英文摘要	Characteristic variation of FinFET due to Fin vertical nonuniformity is simulated in this paper, based on the compact device model. This vertical nonuniformity is generated during the real etching process and induces Fin thickness variation along the height direction. Therefore, the characteristics, such as threshold voltage, sub-threshold slope, on state current, off state current and total channel resistor are investigated influenced by Fin height and deviation angle. The impact of the deviation angle on both digital and analog circuit performance is also predicted.; EI; 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/295167]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xu, Jiaojiao,Ma, Chenyue,Zhang, Chenfei,et al. Characteristics sensitivity of FinFET to fin vertical nonuniformity. 2011-01-01.

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