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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots 期刊论文 chinese physics b, 2016, 卷号: 25, 期号: 10, 页码: 107805 Xiang-Jun Shang; Jian-Xing Xu; Ben Ma; Ze-Sheng Chen; Si-Hang Wei; Mi-Feng Li; Guo-Wei Zha; Li-Chun Zhang; Ying Yu; Hai-Qiao Ni; Zhi-Chuan Niu 收藏  |  浏览/下载：23/0  |  提交时间：2017/03/10 In situ probing and integration of single self-assembled quantum dots-in-nanowires for quantum photonics 期刊论文 nanotechnology, 2015, 卷号: 26, 期号: 38, 页码: 385706-385712 Guo-Wei Zha; Xiang-Jun Shang; Hai-Qiao Ni; Ying Yu; Jian-Xing Xu; Si-Hang Wei; Ben Ma; Li-Chun Zhang; Zhi-Chuan Niu 收藏  |  浏览/下载：20/0  |  提交时间：2016/03/29 Room-Temperature Operation of 2.4 mu m InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density 期刊论文 chinese physics letters, 2014, 卷号: 31, 期号: 5, 页码: 054204 Xing, JL; Zhang, Y; Liao, YP; Wang, J; Xiang, W; Xu, YQ; Wang, GW; Ren, ZW; Niu, ZC 收藏  |  浏览/下载：21/0  |  提交时间：2015/04/02 Investigation of interfaces in AlSb/InAs/Ga0.71In0.29Sb quantum wells by photoluminescence 期刊论文 journal of applied physics, 2014, 卷号: 116, 期号: 12, 页码: 123107 Xing, JL; Zhang, Y; Liao, YP; Wang, J; Xiang, W; Hao, HY; Xu, YQ; Niu, ZC 收藏  |  浏览/下载：10/0  |  提交时间：2015/03/20 High quality above 3-mu m mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy 期刊论文 chinese physics b, 2014, 卷号: 23, 期号: 1, 页码: 017805 Xing, JL; Zhang, Y; Xu, YQ; Wang, GW; Wang, J; Xiang, W; Ni, HQ; Ren, ZW; He, ZH; Niu, ZC 收藏  |  浏览/下载：14/0  |  提交时间：2015/05/11 Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy 期刊论文 applied physics letters, 2014, 卷号: 104, 期号: 5, 页码: 052111 Wang, J; Xing, JL; Xiang, W; Wang, GW; Xu, YQ; Ren, ZW; Niu, ZC 收藏  |  浏览/下载：24/0  |  提交时间：2015/03/19 High quality above 3-μm mid-infrared InGaAsSb_AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy 期刊论文 Chin.Phys.B, 2013, 卷号: 23, 期号: 1, 页码: 017805 Xing Jun-Liang, Zhang Yu, Xu Ying-Qiang, Wang Guo-Wei, Wang Juan, Xiang Wei, Ni Hai-Qiao, Ren Zheng-Wei, He Zhen-Hong, Niu Zhi-Chuan 收藏  |  浏览/下载：15/0  |  提交时间：2014/03/26 Single InAs quantum dot coupled to different “environments” in one wafer for quantum 期刊论文 Applied Physics Letters, 2013, 卷号: 102, 期号: 20, 页码: 201103 Yu, Ying; Shang, Xiang-Jun; Li, Mi-Feng; Zha, Guo-Wei; Xu, Jian-Xing; Wang, Li-Juan; Wang, Guo-Wei; Ni, Hai-Qiao; Dou, Xiuming; Sun, Baoquan; Niu, Zhi-Chuan 收藏  |  浏览/下载：27/0  |  提交时间：2014/03/26 Molecular beam epitaxy growth of high electron mobility InAs AlSb deep 期刊论文 journal of applied physics, 2013, 卷号: 114, 期号: 1, 页码: 013704 Juan Wang, Guo-Wei Wang, Ying-Qiang Xu, Jun-Liang Xing, Wei Xiang, Bao Tang, Yan Zhu, Zheng-Wei Ren, Zhen-Hong He, Zhi-Chuan Niu 收藏  |  浏览/下载：25/0  |  提交时间：2014/03/26 Growth and fabrication of a mid-wavelength infrared focal plane array based on type-II InAs/GaSbsuperlattices 期刊论文 journal of semiconductors, 2013, 卷号: 34, 期号: 11, 页码: 114012 Guowei, Wang; Wei, Xiang; Yingqiang, Xu; Liang, Zhang; Zhenyu, Peng; Yanqiu, Lü; Junjie, Si; Juan, Wang; Junliang, Xing; Zhengwei, Ren; Zhichuan, Niu 收藏  |  浏览/下载：18/0  |  提交时间：2014/03/26