High quality above 3-μm mid-infrared InGaAsSb_AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy | |
Xing Jun-Liang, Zhang Yu, Xu Ying-Qiang, Wang Guo-Wei, Wang Juan, Xiang Wei, Ni Hai-Qiao, Ren Zheng-Wei, He Zhen-Hong, Niu Zhi-Chuan | |
刊名 | Chin.Phys.B |
2013 | |
卷号 | 23期号:1页码:017805 |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2014-03-26 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/24576] |
专题 | 半导体研究所_半导体超晶格国家重点实验室 |
推荐引用方式 GB/T 7714 | Xing Jun-Liang, Zhang Yu, Xu Ying-Qiang, Wang Guo-Wei, Wang Juan, Xiang Wei, Ni Hai-Qiao, Ren Zheng-Wei, He Zhen-Hong, Niu Zhi-Chuan. High quality above 3-μm mid-infrared InGaAsSb_AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy[J]. Chin.Phys.B,2013,23(1):017805. |
APA | Xing Jun-Liang, Zhang Yu, Xu Ying-Qiang, Wang Guo-Wei, Wang Juan, Xiang Wei, Ni Hai-Qiao, Ren Zheng-Wei, He Zhen-Hong, Niu Zhi-Chuan.(2013).High quality above 3-μm mid-infrared InGaAsSb_AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy.Chin.Phys.B,23(1),017805. |
MLA | Xing Jun-Liang, Zhang Yu, Xu Ying-Qiang, Wang Guo-Wei, Wang Juan, Xiang Wei, Ni Hai-Qiao, Ren Zheng-Wei, He Zhen-Hong, Niu Zhi-Chuan."High quality above 3-μm mid-infrared InGaAsSb_AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy".Chin.Phys.B 23.1(2013):017805. |
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