Investigation of interfaces in AlSb/InAs/Ga0.71In0.29Sb quantum wells by photoluminescence

	Investigation of interfaces in AlSb/InAs/Ga0.71In0.29Sb quantum wells by photoluminescence
	Xing, JL ; Zhang, Y ; Liao, YP ; Wang, J ; Xiang, W ; Hao, HY ; Xu, YQ ; Niu, ZC
刊名	journal of applied physics
	2014
卷号	116 期号:12 页码:123107
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2015-03-20
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26134]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Xing, JL,Zhang, Y,Liao, YP,et al. Investigation of interfaces in AlSb/InAs/Ga0.71In0.29Sb quantum wells by photoluminescence[J]. journal of applied physics,2014,116(12):123107.
APA	Xing, JL.,Zhang, Y.,Liao, YP.,Wang, J.,Xiang, W.,...&Niu, ZC.(2014).Investigation of interfaces in AlSb/InAs/Ga0.71In0.29Sb quantum wells by photoluminescence.journal of applied physics,116(12),123107.
MLA	Xing, JL,et al."Investigation of interfaces in AlSb/InAs/Ga0.71In0.29Sb quantum wells by photoluminescence".journal of applied physics 116.12(2014):123107.