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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：半导体物理    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Si-based optoelectronic devices and their attractive applications 会议论文 1st czech-chinese workshop on advanced materials for optoelectronics (amfo 98), prague, czech republic, jun 15-17, 1998 Wang QM; Yang QQ; Zhu YQ; Si JJ; Liu YL; Lei HB; Cheng BW; Yu JZ 收藏  |  浏览/下载：9/0  |  提交时间：2010/11/15 High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method 会议论文 semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998 Ma XY; Cao Q; Wang ST; Guo L; Wang ZM; Wang LM; He GP; Yang YL; Zhang HQ; Zhou XN; Chen LH 收藏  |  浏览/下载：13/0  |  提交时间：2010/10/29 InGaAsP  strained layer quantum well  laser diode  MOCVD   The study of single mode 650nm AlGaInP quantum well laser diodes for DVD 会议论文 semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998 Ma XY; Cao Q; Wang ST; Guo L; Wang LM; Yang YL; Zhang HQ; Zhang XY; Chen LH 收藏  |  浏览/下载：15/0  |  提交时间：2010/10/29 AlGaInP  quantum well  laser diode  MOCVD  DVD   Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots 会议论文 10th international conference on superlattices, microstructures and microdevices, lincoln, nebraska, jul 08-11, 1997 作者:  Han PD 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 GAAS  GROWTH   Material transport in self-assembled InAs/GaAs quantum dot ensemble 会议论文 10th international conference on superlattices, microstructures and microdevices, lincoln, nebraska, jul 08-11, 1997 作者:  Han PD 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15 GROWTH  TRANSITION  GAAS   The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix 会议论文 10th international conference on superlattices, microstructures and microdevices, lincoln, nebraska, jul 08-11, 1997 Wang ZM; Feng SL; Lu ZD; Zhao Q; Yang XP; Chen ZG; Xu ZY; Zheng HZ 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15 GROWTH  INTERDIFFUSION  ISLANDS  SCALE   Electronic investigation of self-organized InAs quantum dots 会议论文 10th international conference on superlattices, microstructures and microdevices, lincoln, nebraska, jul 08-11, 1997 Chen F; Feng SL; Yang XZ; Zhao Q; Wang ZM; Wen LS 收藏  |  浏览/下载：7/0  |  提交时间：2010/11/15 CARRIER RELAXATION   Two-dimensional numerical simulation of the channel electron in an In0.52Al0.48As/In0.53Ga0.48As HEMT 会议论文 1997 ieee hong kong electron devices meeting, hong kong, hong kong, 35672 Zhang XH; Yang YF; Wang ZG 收藏  |  浏览/下载：9/0  |  提交时间：2010/10/29