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科研机构
半导体研究所 [11]
内容类型
会议论文 [6]
期刊论文 [5]
发表日期
2006 [3]
2004 [4]
2003 [1]
2002 [2]
2000 [1]
学科主题
半导体材料 [11]
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Growth of high quality semi-insulating InP single crystal by suppression of compensation defects
会议论文
3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005
Zhao, YW
;
Dong, ZY
;
Duan, ML
;
Sun, WR
;
Yang, ZX
收藏
  |  
浏览/下载:202/19
  |  
提交时间:2010/03/29
indium phosphide
Recent research results on deep level defects in semi-insulating InP - Application to improve material quality
会议论文
12th international conference on indium phosphide and related materials, princeton, nj, may 07-11, 2006
Zhao, YW (Zhao, Youwen)
;
Dong, ZY (Dong, Zhiyuan)
;
Dong, HW (Dong, Hongwei)
;
Sun, NF (Sun, Niefeng)
;
Sun, TN (Sun, Tongnian)
收藏
  |  
浏览/下载:61/12
  |  
提交时间:2010/03/29
STIMULATED CURRENT SPECTROSCOPY
CURRENT TRANSIENT SPECTROSCOPY
FE-DOPED INP
POINT-DEFECTS
COMPENSATION
TEMPERATURE
DONORS
TRAPS
Growth of high quality semi-insulating InP single crystal by suppression of compensation defects
期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 75-77
Zhao YW
;
Dong ZY
;
Duan ML
;
Sun WR
;
Yang ZX
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2010/04/11
indium phosphide
defect
semi-insualting
STIMULATED CURRENT SPECTROSCOPY
CURRENT TRANSIENT SPECTROSCOPY
SEMI-INSULATING INP
DEEP-LEVEL DEFECTS
FE
Annealing ambient controlled deep defect formation in InP
会议论文
10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003
Zhao YW
;
Dong ZY
;
Duan ML
;
Sun WR
;
Zeng YP
;
Sun NF
;
Sun TN
收藏
  |  
浏览/下载:20/1
  |  
提交时间:2010/10/29
FE-DOPED INP
SEMIINSULATING INP
POINT-DEFECTS
PRESSURE
WAFERS
TRAPS
Liquid nitrogen flowrate alarm system for MBE
会议论文
5th international conference on thin film physics and applications, shanghai, peoples r china, may 31-jun 02, 2004
Sun YW
;
Li SY
;
Ni HQ
;
Xu Y
;
Chen LH
收藏
  |  
浏览/下载:217/28
  |  
提交时间:2010/03/29
liquid nitrogen(LN2)
Study on the perfection of in situ P-injection synthesis LEC-InP single crystals
期刊论文
journal of crystal growth, 2004, 卷号: 264, 期号: 1-3, 页码: 17-20
作者:
Zhou XL
收藏
  |  
浏览/下载:441/157
  |  
提交时间:2010/03/09
etch-pit density
Annealing ambient controlled deep defect formation in InP
期刊论文
european physical journal-applied physics, 2004, 卷号: 27, 期号: 1-3, 页码: 167-169
Zhao, YW
;
Dong, ZY
;
Duan, ML
;
Sun, WR
;
Zeng, YP
;
Sun, NF
;
Sun, TN
收藏
  |  
浏览/下载:360/63
  |  
提交时间:2010/03/09
FE-DOPED INP
Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances
期刊论文
journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7
Dong ZY
;
Zhao YW
;
Zeng YP
;
Duan ML
;
Sun WR
;
Jiao JH
;
Lin LY
收藏
  |  
浏览/下载:351/16
  |  
提交时间:2010/08/12
annealing
defects
etching
semiconducting indium phosphide
FE-DOPED INP
SEMIINSULATING INP
INDIUM-PHOSPHIDE
DEFECTS
DIFFUSION
CRYSTALS
WAFERS
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
会议论文
9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001
Zhao YW
;
Sun NF
;
Dong HW
;
Jiao JH
;
Zhao JQ
;
Sun TN
;
Lin LY
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
indium phosphide
semi-insulating
annealing
PICTS
photoluminescence
SEMIINSULATING INP
INDIUM-PHOSPHIDE
FE
PHOTOLUMINESCENCE
TEMPERATURE
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
期刊论文
materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 521-524
Zhao YW
;
Sun NF
;
Dong HW
;
Jiao JH
;
Zhao JQ
;
Sun TN
;
Lin LY
收藏
  |  
浏览/下载:82/19
  |  
提交时间:2010/08/12
indium phosphide
semi-insulating
annealing
PICTS
photoluminescence
SEMIINSULATING INP
INDIUM-PHOSPHIDE
FE
PHOTOLUMINESCENCE
TEMPERATURE
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