Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
	Zhao YW ; Sun NF ; Dong HW ; Jiao JH ; Zhao JQ ; Sun TN ; Lin LY
刊名	materials science and engineering b-solid state materials for advanced technology
	2002
卷号	91 期号:0 页码:521-524
关键词	indium phosphide semi-insulating annealing PICTS photoluminescence SEMIINSULATING INP INDIUM-PHOSPHIDE FE PHOTOLUMINESCENCE TEMPERATURE
ISSN号	0921-5107
通讯作者	sun nf,hebei semicond res inst,pob 179-40,shijiazhuang 050002,hebei,peoples r china.
中文摘要	semi-insulating (si) inp wafers of 2 and 3 in. diameters have been prepared by annealing undoped lec inp at 930 degreesc for 80 h under pure phosphorus ambient (pp) and iron phosphide ambient (ip). the electrical uniformity of annealed undoped si wafers, along with a fe-doped as-grown si lec inp wafer, has been characterized by whole wafer pl mapping and radial hall measurements. defects in these wafers have been detected by photo-induced current transient spectroscopy (picts). the results indicated that the uniformity of ip wafer is much better than that of pp wafer and as-grown fe-doped si inp wafer. there are fewer traps in undoped si inp ip wafer than in as grown fe-doped and undoped si inp pp wafer, as evidenced by picts. the good uniformity of the ip wafer is related to the nonexistence of high concentration of thermally induced defects. the mechanism for this phenomenon is discussed based on the results. (c) 2002 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11946]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao YW,Sun NF,Dong HW,et al. Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers[J]. materials science and engineering b-solid state materials for advanced technology,2002,91(0):521-524.
APA	Zhao YW.,Sun NF.,Dong HW.,Jiao JH.,Zhao JQ.,...&Lin LY.(2002).Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers.materials science and engineering b-solid state materials for advanced technology,91(0),521-524.
MLA	Zhao YW,et al."Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers".materials science and engineering b-solid state materials for advanced technology 91.0(2002):521-524.