Growth of high quality semi-insulating InP single crystal by suppression of compensation defects

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	Growth of high quality semi-insulating InP single crystal by suppression of compensation defects
	Zhao YW ; Dong ZY ; Duan ML ; Sun WR ; Yang ZX
刊名	journal of rare earths
	2006
卷号	24 期号:sp.iss.si 页码:75-77
关键词	indium phosphide defect semi-insualting STIMULATED CURRENT SPECTROSCOPY CURRENT TRANSIENT SPECTROSCOPY SEMI-INSULATING INP DEEP-LEVEL DEFECTS FE
ISSN号	1002-0721
通讯作者	zhao, yw, chinese acad sci, inst semicond, beijing 100083, peoples r china. e-mail: zhaoyw@red.semi.ac.cn
中文摘要	deep level defects in as-grown and annealed si-inp samples were investigated by thermally stimulated current spectroscopy. correlations between electrical property, compensation ratio, thermal stability and deep defect concentration in si-inp were revealed. an optimized crystal growth condition for high quality si-inp was demonstrated based on the experimental results.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10688]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao YW,Dong ZY,Duan ML,et al. Growth of high quality semi-insulating InP single crystal by suppression of compensation defects[J]. journal of rare earths,2006,24(sp.iss.si):75-77.
APA	Zhao YW,Dong ZY,Duan ML,Sun WR,&Yang ZX.(2006).Growth of high quality semi-insulating InP single crystal by suppression of compensation defects.journal of rare earths,24(sp.iss.si),75-77.
MLA	Zhao YW,et al."Growth of high quality semi-insulating InP single crystal by suppression of compensation defects".journal of rare earths 24.sp.iss.si(2006):75-77.