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科研机构
半导体研究所 [28]
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会议论文 [28]
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2009 [1]
2008 [2]
2007 [4]
2006 [2]
2004 [4]
2003 [1]
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半导体材料 [28]
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Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer
会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Zhao, YM
;
Sun, GS
;
Liu, XF
;
Li, JY
;
Zhao, WS
;
Wang, L
;
Li, JM
;
Zeng, YP
收藏
  |  
浏览/下载:54/0
  |  
提交时间:2010/03/09
Silicon Carbide
Aluminum Nitride
buffer layer
LPCVD
Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes
会议论文
3rd ieee international conference of nano/micro engineered and molecular systems, sanya, peoples r china, jan 06-09, 2008
Zhou, W
;
Yang, JL
;
Sun, GS
;
Liu, XF
;
Yang, FH
;
Li, JM
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2010/03/09
bulge test fracture property
silicon carbide thin films
Weibull distribution function
Simulation and fabrication of the SiC-based clamped-clamped filter
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Zhao, YM
;
Ning, J
;
Sun, GS
;
Liu, XF
;
Wang, L
;
Ji, G
;
Wang, L
;
Zhao, WS
;
Li, JM
;
Yang, FH
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/03/09
MICROMECHANICAL RESONATORS
FREQUENCY
Kinetic Monte Carlo simulation of semiconductor quantum dot growth
会议论文
china international conference on nanoscience and technology (chinanano 2005), beijing, peoples r china, jun 09-11, 2005
Zhao C
;
Chen YH
;
Sun J
;
Lei W
;
Cui CX
;
Yu LK
;
Li K
;
Wang ZG
收藏
  |  
浏览/下载:269/88
  |  
提交时间:2010/03/29
Monte Carlo simulation
Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers
会议论文
33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Li, JM (Li, J. M.)
;
Ning, J (Ning, J.)
;
Zhao, YM (Zhao, Y. M.)
;
Luo, MC (Luo, M. C.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Zeng, YP (Zeng, Y. P.)
收藏
  |  
浏览/下载:89/9
  |  
提交时间:2010/03/29
AVALANCHE PHOTODIODES
AREA
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection
会议论文
6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Zhao, YM (Zhao, Y. M.)
;
Ning, J (Ning, J.)
;
Li, JY (Li, J. Y.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Luo, MC (Luo, M. C.)
;
Li, JM (Li, J. M.)
收藏
  |  
浏览/下载:103/26
  |  
提交时间:2010/03/29
homoepitaxy
4H-SiC
multi-epilayer
UV detection
p(+)-pi-n(-)
ULTRAVIOLET PHOTODETECTOR
EPITAXIAL-GROWTH
Micro-raman investigation of defects in a 4H-SiC homoepilayer
会议论文
6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Li, JM (Li, J. M.)
;
Zhao, YM (Zhao, Y. M.)
;
Li, JY (Li, J. Y.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Luo, MC (Luo, M. C.)
;
Zeng, YP (Zeng, Y. P.)
收藏
  |  
浏览/下载:162/28
  |  
提交时间:2010/03/29
micro-raman
4H-SiC
defects
3C-inclusions
triangle-shaped inclusion
EPITAXIAL LAYERS
SILICON-CARBIDE
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
会议论文
international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005
Sun, GS (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Gong, QC (Gong, Quancheng)
;
Gao, X (Gao, Xin)
;
Wang, L (Wang, Lei)
;
Liu, XF (Liu, Xingfang)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
浏览/下载:100/29
  |  
提交时间:2010/03/29
homoepitaxial growth
low-pressure hot-wall CVD
structural and optical characteristics
intentional doping
Schottky barrier diodes
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces
会议论文
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Sun, GS (Sun, G. S.)
;
Liu, XF (Liu, X. F.)
;
Gong, QC (Gong, Q. C.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Li, JY (Li, J. Y.)
;
Zeng, YP (Zeng, Y. P.)
;
Li, JM (Li, J. M.)
收藏
  |  
浏览/下载:166/18
  |  
提交时间:2010/03/29
4H-SiC
Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces
会议论文
7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004
Sun, GS
;
Ning, J
;
Zhang, YX
;
Gao, X
;
Wang, L
;
Zhao, WS
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:206/60
  |  
提交时间:2010/03/29
4H-SiC
LPCVD homoepitaxial growth
thermal oxidization
MOS structures
HOT-WALL CVD
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