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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Abnormal photoabsorption in high resistance GaN epilayer 期刊论文 acta physica sinica, 2010, 卷号: 59, 期号: 11, 页码: 8048-8051 Liu WB (Liu Wen-Bao); Zhao DG (Zhao De-Gang); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhu JJ (Zhu Jian-Jun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui) 收藏  |  浏览/下载：28/0  |  提交时间：2010/12/27 GaN  exciton  photovoltaic spectroscopy  MSM  photoresponsivity   Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802 Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long) 收藏  |  浏览/下载：73/2  |  提交时间：2010/05/24 Ga vacancies  MOCVD  GaN  Schottky barrier photodetector  REVERSE-BIAS LEAKAGE  MOLECULAR-BEAM EPITAXY  P-N-JUNCTIONS  POSITRON-ANNIHILATION  DIODES  FILMS   Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area 期刊论文 journal of physics d-applied physics, 2009, 卷号: 42, 期号: 1, 页码: art. no. 015108 作者:  Wang H;  Zhao DG;  Zhang SM;  Yang H;  Yang H 收藏  |  浏览/下载：168/40  |  提交时间：2010/03/08 SURFACE-MORPHOLOGY  DETECTORS  GROWTH   Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films 期刊论文 semiconductor science and technology, 2009, 卷号: 24, 期号: 7, 页码: art. no. 075004 作者:  Wang H;  Yang H;  Yang H;  Zhao DG;  Wang YT 收藏  |  浏览/下载：47/1  |  提交时间：2010/03/08 ELECTRON-TRANSPORT  PHASE EPITAXY  NITRIDE INN  BAND-GAP   Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector 期刊论文 semiconductor science and technology, 2008, 卷号: 23, 期号: 10, 页码: art. no. 105015 Zhang, S; Zhao, DG; Jiang, DS; Liu, WB; Duan, LH; Wang, YT; Zhu, JJ; Liu, ZS; Zhang, SM; Yang, H 收藏  |  浏览/下载：63/0  |  提交时间：2010/03/08 METAL ULTRAVIOLET PHOTODETECTORS  UV DETECTORS   Investigation on the structural origin of n-type conductivity in InN films 期刊论文 journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: art. no. 135403 Wang, H; Jiang, DS; Wang, LL; Sun, X; Liu, WB; Zhao, DG; Zhu, JJ; Liu, ZS; Wang, YT; Zhang, SM; Yang, H 收藏  |  浏览/下载：53/1  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY  GAN FILMS  DISLOCATION SCATTERING  LAYER THICKNESS  INDIUM NITRIDE  BAND-GAP  VACANCIES   Effect of annealing on photoluminescence properties of neon implanted GaN 期刊论文 journal of physics d-applied physics, 2008, 卷号: 41, 期号: 2, 页码: art. no. 025107 作者:  Yang H;  Lu GJ;  Zhang SM;  Zhao DG;  Yang H 收藏  |  浏览/下载：66/1  |  提交时间：2010/03/08 LUMINESCENCE   Effects of Ag on electrical properties of Ag/Ni/p-GaN ohmic contact 期刊论文 chinese physics letters, 2007, 卷号: 24, 期号: 6, 页码: 1741-1744 Zhao DS (Zhao De-Sheng); Zhang SM (Zhang Shu-Ming); Duan LH (Duan Li-Hong); Wang YT (Wang Yu-Tian); Jiang DS (Jiang De-Sheng); Liu WB (Liu Wen-Bao); Zhang BS (Zhang Bao-Shun) 收藏  |  浏览/下载：46/0  |  提交时间：2010/03/29 LIGHT-EMITTING-DIODES