Abnormal photoabsorption in high resistance GaN epilayer

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	Abnormal photoabsorption in high resistance GaN epilayer
	Liu WB (Liu Wen-Bao) ; Zhao DG (Zhao De-Gang) ; Jiang DS (Jiang De-Sheng) ; Liu ZS (Liu Zong-Shun) ; Zhu JJ (Zhu Jian-Jun) ; Zhang SM (Zhang Shu-Ming) ; Yang H (Yang Hui)
刊名	acta physica sinica
	2010
卷号	59 期号:11 页码:8048-8051
关键词	GaN exciton photovoltaic spectroscopy MSM photoresponsivity
通讯作者	liu, wb, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. wbliu@semi.ac.cn
合作状况	其它
英文摘要	unintentionally doped gan epilayers are grown by the metalorganic chemical vapor deposition (mocvd). photovoltaic (pv) spectroscopy shows that there appears an abnormal photoabsorption in some undoped gan films with high resistance. the peak energy of the absorption spectrum is smaller than the intrinsic energy band gap of gan. this phenomenon may be related to exciton absorption. then metal-semiconductor-metal (msm) schottky photodetectors are fabricated on these high resistance epilayers. the photo spectrum responses are different when the light individually irradiates each of the two electrodes with the photodetector which are differently biased. when the excitation light irradiates around the reverse biased schottky junction, the responsivity is almost one order of magnitude larger than that around the forward biased junction. furthermore, when the excitation light irradiates the reverse biased schottky junction, the peak energy of the spectrum has a prominent red-shift compared with the peak energy of the spectrum measured with the excitation light irradiating the forward biased schottky junction. the shift value is about 28 mev, and it is found to be insensitive to temperature. according to the analyses of the distribution of the electric field within the msm device and the different dependences of the response on the electric field intensity between the free carriers and excitons, a reliable explanation for the different response among various areas is proposed.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-27t07:41:14z no. of bitstreams: 1 高阻氮化镓外延层的异常光吸收.pdf: 701453 bytes, checksum: bcc29f8a7fd5f2c7fb39ace9359bdc2c (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-27t12:23:50z (gmt) no. of bitstreams: 1 高阻氮化镓外延层的异常光吸收.pdf: 701453 bytes, checksum: bcc29f8a7fd5f2c7fb39ace9359bdc2c (md5); made available in dspace on 2010-12-27t12:23:50z (gmt). no. of bitstreams: 1 高阻氮化镓外延层的异常光吸收.pdf: 701453 bytes, checksum: bcc29f8a7fd5f2c7fb39ace9359bdc2c (md5) previous issue date: 2010; project supported by the national natural science foundation of china (grant nos. 60776047, 60506001, 60476021, 60576003, 60836003).; 其它
学科主题	光电子学
收录类别	SCI
资助信息	project supported by the national natural science foundation of china (grant nos. 60776047, 60506001, 60476021, 60576003, 60836003).
语种	中文
公开日期	2010-12-27 ; 2011-04-28
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20674]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Liu WB ,Zhao DG ,Jiang DS ,et al. Abnormal photoabsorption in high resistance GaN epilayer[J]. acta physica sinica,2010,59(11):8048-8051.
APA	Liu WB .,Zhao DG .,Jiang DS .,Liu ZS .,Zhu JJ .,...&Yang H .(2010).Abnormal photoabsorption in high resistance GaN epilayer.acta physica sinica,59(11),8048-8051.
MLA	Liu WB ,et al."Abnormal photoabsorption in high resistance GaN epilayer".acta physica sinica 59.11(2010):8048-8051.