Effects of Ag on electrical properties of Ag/Ni/p-GaN ohmic contact

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Effects of Ag on electrical properties of Ag/Ni/p-GaN ohmic contact
	Zhao DS (Zhao De-Sheng) ; Zhang SM (Zhang Shu-Ming) ; Duan LH (Duan Li-Hong) ; Wang YT (Wang Yu-Tian) ; Jiang DS (Jiang De-Sheng) ; Liu WB (Liu Wen-Bao) ; Zhang BS (Zhang Bao-Shun)
刊名	chinese physics letters
	2007
卷号	24 期号:6 页码:1741-1744
关键词	LIGHT-EMITTING-DIODES
ISSN号	issn: 0256-307x
通讯作者	zhao, ds, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: desheng.zhao@163.com
中文摘要	properties of the ag/ni/p-gan structure at different temperatures are studied by auger electron spectroscopy, scanning electron microscopy and high resolution x-ray diffraction. the effect of ag in ohmic contact on the crystalline quality is investigated and the optimized value of annealing temperature is reported. the lowest specific contact resistance of 2.5 x 10(-4) omega cm(2) is obtained at annealing temperature of 550 degrees c.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9480]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao DS ,Zhang SM ,Duan LH ,et al. Effects of Ag on electrical properties of Ag/Ni/p-GaN ohmic contact[J]. chinese physics letters,2007,24(6):1741-1744.
APA	Zhao DS .,Zhang SM .,Duan LH .,Wang YT .,Jiang DS .,...&Zhang BS .(2007).Effects of Ag on electrical properties of Ag/Ni/p-GaN ohmic contact.chinese physics letters,24(6),1741-1744.
MLA	Zhao DS ,et al."Effects of Ag on electrical properties of Ag/Ni/p-GaN ohmic contact".chinese physics letters 24.6(2007):1741-1744.