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Compliance Current Effect on Switching Behavior of Hafnium Oxide based RRAM 会议论文
作者:  Qi, Yanfei;  Zhao, Chun;  Fang, Yuxiao;  Lu, Qifeng;  Liu, Chenguang
收藏  |  浏览/下载:3/0  |  提交时间:2019/11/26
Investigation of Anomalous Capacitance-Voltage Behavior Caused by Interface Dipoles and the Effect of Post-Metal-Annealing 会议论文
作者:  Lu, Qifeng;  Zhao, Ce Zhou;  Zhao, Chun;  Taylor, Steve;  Chalker, Paul R.
收藏  |  浏览/下载:3/0  |  提交时间:2019/11/26
Atomic Layer Deposition of HfO2 Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs 会议论文
作者:  Liu, Qifeng;  Lam, Sang;  Mu, Yifei;  Zhao, Ce Zhou;  Zhao, Yinchao
收藏  |  浏览/下载:13/0  |  提交时间:2019/11/26
Capacitance-voltage characteristics measured through pulse technique on high-k dielectric MOS devices 会议论文
作者:  Lu, Qifeng;  Qi, Yanfei;  Zhao, Ce Zhou;  Zhao, Chun;  Taylor, Stephen
收藏  |  浏览/下载:4/0  |  提交时间:2019/11/26
Influence of HfAlO Composition on Resistance Ratio of RRAM with Ti electrode 会议论文
作者:  Qi, Yanfei;  Fang, Yuxiao;  Zhao, Chun;  Lu, Qifeng;  Liu, Chenguang
收藏  |  浏览/下载:3/0  |  提交时间:2019/11/26
Effects of Biased Irradiation on Charge Trapping in HfO2 Dielectric Thin Films 会议论文
作者:  Mu, Yifei;  Zhao, Ce Zhou;  Lu, Qifeng;  Zhao, Chun;  Qi, Yanfei
收藏  |  浏览/下载:4/0  |  提交时间:2019/11/26


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