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| First principles study of the electronic properties of twinned SiC nanowires 期刊论文 journal of nanoparticle research, 2011, 卷号: 13, 期号: 1, 页码: 185-191 作者: Li JB 收藏  |  浏览/下载:100/6  |  提交时间:2011/07/05
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| Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311 作者: Xu B; Zhou GY; Ye XL; Zhang HY 收藏  |  浏览/下载:53/5  |  提交时间:2011/07/05
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| Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文 journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145 作者: Duan RF 收藏  |  浏览/下载:80/4  |  提交时间:2011/07/05
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| Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文 applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112 作者: Shi K; Jiao CM; Song HP 收藏  |  浏览/下载:94/7  |  提交时间:2011/07/05
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| Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文 journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032 作者: Pan X 收藏  |  浏览/下载:20/0  |  提交时间:2011/09/14
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| Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文 thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230 Hao RT (Hao Ruiting); Deng SK (Deng Shukang); Shen LX (Shen Lanxian); Yang PZ (Yang Peizhi); Tu JL (Tu Jielei); Liao H (Liao Hua); Xu YQ (Xu Yingqiang); Niu ZC (Niu Zhichuan) 收藏  |  浏览/下载:41/0  |  提交时间:2010/12/28
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| Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802 Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long) 收藏  |  浏览/下载:73/2  |  提交时间:2010/05/24
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| Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 9, 页码: art. no. 094903 Li MC; Qiu YX; Liu GJ; Wang YT; Zhang BS; Zhao LC 收藏  |  浏览/下载:31/0  |  提交时间:2010/03/08
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| Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding 期刊论文 chinese physics letters, 2009, 卷号: 26, 期号: 6, 页码: art. no. 064211 作者: Wang Y; Pan JQ 收藏  |  浏览/下载:112/0  |  提交时间:2010/03/08
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| Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文 chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301 Guo LC; Wang XL; Xiao HL; Ran JX; Wang CM; Ma ZY; Luo WJ; Wang ZG 收藏  |  浏览/下载:193/43  |  提交时间:2010/03/08
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