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Molecular beam epitaxy growth of GaAs on an offcut Ge substrate 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18102
作者:  Li MF
收藏  |  浏览/下载：106/7  |  提交时间：2011/07/05
Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL; Chen YH; Jiang CY; Liu Y; Ma H
收藏  |  浏览/下载：36/4  |  提交时间：2011/07/05
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文
journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464
作者:  Wang YT;  Zhao DG;  Zhang SM;  Yang H;  Jiang DS
收藏  |  浏览/下载：147/11  |  提交时间：2010/04/04
Controlling electronic structures by irradiation in single-walled SiC nanotubes: a first-principles molecular dynamics study 期刊论文
nanotechnology, 2009, 卷号: 20, 期号: 7, 页码: art. no. 075708
作者:  Li JB
收藏  |  浏览/下载：165/21  |  提交时间：2010/03/08
Zn2sio4/zno core/shell coaxial heterostructure nanobelts formed by an epitaxial growth 期刊论文
Journal of physical chemistry c, 2008, 卷号: 112, 期号: 42, 页码: 16312-16317
作者:  Cheng, Baochang;  Yu, Xiaoming;  Liu, Hongjuan;  Wang, Zhanguo
收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12
The effect of growth temperature on structural quality of GaN/AlN quantum wells by metal-organic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 10, 页码: art. no. 105106
Ma, ZF; Zhao, DG; Wang, YT; Jiang, DS; Zhang, SM; Zhu, JJ; Liu, ZS; Sun, BJ; Yang, H; Liang, JW
收藏  |  浏览/下载：52/3  |  提交时间：2010/03/08
Zn2SiO4/ZnO Core/Shell Coaxial Heterostructure Nanobelts Formed by an Epitaxial Growth 期刊论文
journal of physical chemistry c, 2008, 卷号: 112, 期号: 42, 页码: 16312-16317
Cheng BC; Yu XM; Liu HJ; Wang ZG
收藏  |  浏览/下载：55/0  |  提交时间：2010/03/08
Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111) 期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 1, 页码: art.no.011914
Liu W; Zhu JJ; Jiang S; Yang H; Wang JF
收藏  |  浏览/下载：33/0  |  提交时间：2010/03/29
Effects of rapid thermal annealing on the emission properties of highly uniform self-assembled InAs/GaAs quantum dots emitting at 1.3 mu m 期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 11, 页码: art.no.111912
Yang T (Yang, Tao); Tatebayashi J (Tatebayashi, Jun); Aoki K (Aoki, Kanna); Nishioka M (Nishioka, Masao); Arakawa Y (Arakawa, Yasuhiko)
收藏  |  浏览/下载：57/0  |  提交时间：2010/03/29
MBE growth of very short period InAs/GaSb type-II superlattices on (001) GaAs substrates 期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 21, 页码: 6690-6693
Hao RT (Hao Ruiting); Xu YQ (Xu Yingqiang); Zhou ZQ (Zhou Zhiqiang); Ren ZW (Ren Zhengwei); Ni HQ (Ni Haiqiao); He ZH (He Zhenhong); Niu ZC (Niu Zhichuan)
收藏  |  浏览/下载：23/0  |  提交时间：2010/03/29

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