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	The effect of growth temperature on structural quality of GaN/AlN quantum wells by metal-organic chemical vapour deposition
	Ma, ZF ; Zhao, DG ; Wang, YT ; Jiang, DS ; Zhang, SM ; Zhu, JJ ; Liu, ZS ; Sun, BJ ; Yang, H ; Liang, JW
刊名	journal of physics d-applied physics
	2008
卷号	41期号:10页码:art. no. 105106
关键词	INTERSUBBAND ABSORPTION MU-M ALGAN GAN INTERLAYERS MOVPE ALN
ISSN号	0022-3727
通讯作者	zhang, sm, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: smzhang@red.semi.ac.cn
中文摘要	the effect of the growth temperature on the surface and interface quality for the gan/aln multiquantum well (mqw) layer grown by metal-organic vapour chemical deposition is investigated. the obtained gan/aln mqw structure is almost coherent to the underlying algan layer at improved growth conditions. with a relatively low growth temperature, the gan/aln mqw growth rate increases, the surface roughness reduces considerably and no macro steps are observed, resulting in a better periodicity of mqw.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6690]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ma, ZF,Zhao, DG,Wang, YT,et al. The effect of growth temperature on structural quality of GaN/AlN quantum wells by metal-organic chemical vapour deposition[J]. journal of physics d-applied physics,2008,41(10):art. no. 105106.
APA	Ma, ZF.,Zhao, DG.,Wang, YT.,Jiang, DS.,Zhang, SM.,...&Liang, JW.(2008).The effect of growth temperature on structural quality of GaN/AlN quantum wells by metal-organic chemical vapour deposition.journal of physics d-applied physics,41(10),art. no. 105106.
MLA	Ma, ZF,et al."The effect of growth temperature on structural quality of GaN/AlN quantum wells by metal-organic chemical vapour deposition".journal of physics d-applied physics 41.10(2008):art. no. 105106.

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