Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111)

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	Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111)
	Liu W ; Zhu JJ ; Jiang S ; Yang H ; Wang JF
刊名	applied physics letters
	2007
卷号	90 期号:1 页码:art.no.011914
关键词	CHEMICAL-VAPOR-DEPOSITION
ISSN号	issn: 0003-6951
通讯作者	liu, w, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: liuwei@red.semi.ac.cn
中文摘要	the strain evolution in metal organic chemical vapor deposition growth of gan on si (111) substrate with an aln interlayer is studied. during the growth of gan film on aln interlayer, the growth stress changes from compression to tension. the study shows that the density of v trenches in the aln interlayer surface and the threading dislocations generated in the aln interlayer have a significant influence on this strain evolution process. the dislocations generated in aln interlayer may thread across the interface and play a key role in the strain evolution process of the gan layer grown on aln interlayer.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9716]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu W,Zhu JJ,Jiang S,et al. Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111)[J]. applied physics letters,2007,90(1):art.no.011914.
APA	Liu W,Zhu JJ,Jiang S,Yang H,&Wang JF.(2007).Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111).applied physics letters,90(1),art.no.011914.
MLA	Liu W,et al."Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111)".applied physics letters 90.1(2007):art.no.011914.