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科研机构
半导体研究所 [39]
内容类型
期刊论文 [39]
发表日期
2011 [1]
2010 [2]
2009 [22]
2008 [4]
2007 [1]
2006 [4]
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半导体物理 [18]
半导体材料 [12]
光电子学 [8]
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Metal electrode influence on the wet selective etching of GaAs/AlGaAs
期刊论文
journal of vacuum science & technology b, 2011, 卷号: 29, 期号: 4, 页码: 41208
Wang J
;
Han Q
;
Yang XH
;
Wang XP
;
Ni HQ
;
He JF
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2012/02/06
HYDROGEN-PEROXIDE SOLUTIONS
III-V SEMICONDUCTORS
PSEUDOMORPHIC MODFETS
GAAS
FABRICATION
TRANSISTOR
ALGAAS
Optically controlled quantum dot gated transistors with high on/off ratio
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 8, 页码: art. no. 083503
Yang XH (Yang Xiaohong)
;
Xu XL (Xu Xiulai)
;
Wang XP (Wang Xiuping)
;
Ni HQ (Ni Haiqiao)
;
Han Q (Han Qin)
;
Niu ZC (Niu Zhichuan)
;
Williams DA (Williams David A.)
收藏
  |  
浏览/下载:68/2
  |  
提交时间:2010/04/22
III-V semiconductors
indium compounds
laser beam applications
nanoelectronics
photoelectric devices
photoelectricity
phototransistors
semiconductor quantum dots
I-N JUNCTIONS
Multimode resonances in metallically confined square-resonator microlasers
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 5, 页码: art. no. 051104
Che KJ (Che Kai-Jun)
;
Yang YD (Yang Yue-De)
;
Huang YZ (Huang Yong-Zhen)
收藏
  |  
浏览/下载:185/14
  |  
提交时间:2010/04/13
aluminium compounds
finite difference time-domain analysis
gallium compounds
III-V semiconductors
indium compounds
laser cavity resonators
photolithography
refractive index
sputter etching
DIRECTIONAL EMISSION
MICRODISK LASERS
MODES
Revised ab initio natural band offsets of all group iv, ii-vi, and iii-v semiconductors
期刊论文
Applied physics letters, 2009, 卷号: 94, 期号: 21, 页码: 3
作者:
Li, Yong-Hua
;
Walsh, Aron
;
Chen, Shiyou
;
Yin, Wan-Jian
;
Yang, Ji-Hui
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2019/05/12
Ab initio calculations
Band structure
Cadmium compounds
Iii-v semiconductors
Ii-vi semiconductors
Iv-vi semiconductors
Zinc compounds
Structure, magnetization, and low-temperature spin dynamic behavior of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 5, 页码: art. no. 053912
Wang WZ
;
Deng JJ
;
Lu J
;
Sun BQ
;
Wu XG
;
Zhao JH
收藏
  |  
浏览/下载:213/74
  |  
提交时间:2010/03/08
annealing
Curie temperature
ferromagnetic materials
gallium arsenide
III-V semiconductors
magnetic susceptibility
magnetisation
manganese compounds
nanofabrication
nanostructured materials
RKKY interaction
semiconductor thin films
semimagnetic semiconductors
spin dynamics
Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy (vol 94, 052101, 2009)
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 12, 页码: art. no. 129901
作者:
Wei HY
;
Song HP
;
Jiao CM
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  |  
浏览/下载:379/108
  |  
提交时间:2010/03/08
aluminium compounds
core levels
III-V semiconductors
magnesium compounds
semiconductor heterojunctions
semiconductor-insulator boundaries
X-ray photoelectron spectra
Depolarization blueshift in intersubband transitions of triangular quantum wires
期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 11, 页码: art. no. 113712
作者:
Song HP
;
Zhang B
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/04/04
aluminium compounds
effective mass
gallium arsenide
III-V semiconductors
SCF calculations
semiconductor quantum wires
spectral line shift
EXCHANGE INTERACTION
ENERGY
STATES
ABSORPTION
NANOWIRES
ELECTRONS
SUBBANDS
WELLS
FIELD
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
;
Yin ZG
收藏
  |  
浏览/下载:70/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
Measuring spin diffusion of electrons in bulk n-GaAs using circularly dichromatic absorption difference spectroscopy of spin gratings
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 20, 页码: art. no. 202109
Yu HL
;
Zhang XM
;
Wang PF
;
Ni HQ
;
Niu ZC
;
Lai TS
收藏
  |  
浏览/下载:53/4
  |  
提交时间:2010/03/08
circular dichroism
diffraction gratings
diffusion
gallium arsenide
homodyne detection
III-V semiconductors
spin dynamics
spin polarised transport
Lattice polarity detection of InN by circular photogalvanic effect
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 3, 页码: art. no. 031902
Zhang Q
;
Wang XQ
;
He XW
;
Yin CM
;
Xu FJ
;
Shen B
;
Chen YH
;
Wang ZG
;
Ishitani Y
;
Yoshikawa A
收藏
  |  
浏览/下载:64/0
  |  
提交时间:2010/03/08
III-V semiconductors
indium compounds
nondestructive testing
photoconductivity
radiation effects
semiconductor thin films
wide band gap semiconductors
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