Optically controlled quantum dot gated transistors with high on/off ratio

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	Optically controlled quantum dot gated transistors with high on/off ratio
	Yang XH (Yang Xiaohong) ; Xu XL (Xu Xiulai) ; Wang XP (Wang Xiuping) ; Ni HQ (Ni Haiqiao) ; Han Q (Han Qin) ; Niu ZC (Niu Zhichuan) ; Williams DA (Williams David A.)
刊名	applied physics letters
	2010
卷号	96 期号:8 页码:art. no. 083503
关键词	III-V semiconductors indium compounds laser beam applications nanoelectronics photoelectric devices photoelectricity phototransistors semiconductor quantum dots I-N JUNCTIONS
通讯作者	yang, xh, cavendish lab, hitachi cambridge lab, jj thompson ave, cambridge cb3 0he, england.e-mail address: xhyang@red.semi.ac.cn
合作状况	国际
英文摘要	we report the design and fabrication of inas quantum dot gated transistors, which are normally-on, where the channel current can be switched off by laser illumination. laser light at 650 nm with a power of 850 pw switches the channel current from 5 mu a to 2 pa, resulting in an on/off ratio of more than 60 db. the switch-off mechanism and carrier dynamics are analyzed with simulated band structure.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-22t13:15:47z no. of bitstreams: 1 optically controlled quantum dot gated transistors with high onoff ratio.pdf: 255560 bytes, checksum: f230e30c1fb5fa3901efdede25629ef8 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-22t13:38:37z (gmt) no. of bitstreams: 1 optically controlled quantum dot gated transistors with high onoff ratio.pdf: 255560 bytes, checksum: f230e30c1fb5fa3901efdede25629ef8 (md5); made available in dspace on 2010-04-22t13:38:37z (gmt). no. of bitstreams: 1 optically controlled quantum dot gated transistors with high onoff ratio.pdf: 255560 bytes, checksum: f230e30c1fb5fa3901efdede25629ef8 (md5) previous issue date: 2010; national high technology research and development program of china 2009aa03z404 2007aa03z421; national program on key basic research project of china 2007cb936304; 国际
学科主题	光电子学
收录类别	SCI
资助信息	national high technology research and development program of china 2009aa03z404 2007aa03z421; national program on key basic research project of china 2007cb936304
语种	英语
公开日期	2010-04-22 ; 2010-10-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11179]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Yang XH ,Xu XL ,Wang XP ,et al. Optically controlled quantum dot gated transistors with high on/off ratio[J]. applied physics letters,2010,96(8):art. no. 083503.
APA	Yang XH .,Xu XL .,Wang XP .,Ni HQ .,Han Q .,...&Williams DA .(2010).Optically controlled quantum dot gated transistors with high on/off ratio.applied physics letters,96(8),art. no. 083503.
MLA	Yang XH ,et al."Optically controlled quantum dot gated transistors with high on/off ratio".applied physics letters 96.8(2010):art. no. 083503.