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科研机构
安徽大学 [52]
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期刊论文 [50]
会议论文 [2]
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2018 [1]
2017 [12]
2016 [9]
2015 [13]
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专题:安徽大学
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Modulation of the microstructure, optical, and electrical properties of HfYO gate dielectrics by annealing temperature
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 卷号: Vol.735, 页码: 1427-1434
作者:
Wang,D.
;
Zheng,C. Y.
;
Zhu,L.
;
Zhang,C.
;
Liang,S.
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/24
FLAT-BAND VOLTAGE
HFO2 THIN-FILMS
YTTRIUM
HAFNIUM
Y2O3
FABRICATION
SILICON
STACK
ALD
Modulation of electrical properties and current conduction mechanism of HfAlO/Ge gate stack by ALD-derived Al2O3 passivation layer
期刊论文
Journal of Alloys and Compounds, 2017, 卷号: Vol.695, 页码: 1591-1599
作者:
Li,W. D.
;
Jin,P.
;
Wei,H. H.
;
Xiao,X. D.
;
Gao,J.
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  |  
浏览/下载:4/0
  |  
提交时间:2019/04/22
SURFACE PASSIVATION
INTERFACE PROPERTIES
HIGH-PERFORMANCE
DEPOSITED AL2O3
HYBRID FILMS
GE
DIELECTRICS
HFO2
CAPACITORS
GAAS
Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation
期刊论文
Journal of Alloys and Compounds, 2017, 卷号: Vol.695, 页码: 2199-2206
作者:
Lv,J. G.
;
Fang,Z. B.
;
Sun,Z. Q.
;
Liu,M.
;
Gao,J.
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  |  
浏览/下载:9/0
  |  
提交时间:2019/04/22
OXIDES
DIELECTRICS
TRANSISTORS
DEPENDENCE
CHEMISTRY
HFO2
Modulation of Band Offset in Sputtering-Derived MoS2/HfO2 Heterojunction by Gd Incorporation
期刊论文
Science of Advanced Materials, 2017, 卷号: Vol.9 No.6, 页码: 1057-1063
作者:
Lv,J. G.
;
Li,W. D.
;
Jin,P.
;
Xiao,D. Q.
;
Zheng,C. Y.
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  |  
浏览/下载:9/0
  |  
提交时间:2019/04/22
TRANSITION-METAL DICHALCOGENIDES
RAY PHOTOELECTRON-SPECTROSCOPY
CHEMICAL-VAPOR-DEPOSITION
MOS2 ATOMIC LAYERS
MONOLAYER MOS2
TRANSISTORS
ELECTRONICS
ALIGNMENTS
CIRCUITS
GROWTH
Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation
期刊论文
Journal of Alloys and Compounds, 2017, 卷号: Vol.699, 页码: 415-420
作者:
Li,W. D.
;
Lv,J. G.
;
Jin,P.
;
Xiao,D. Q.
;
Wang,P. H.
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  |  
浏览/下载:4/0
  |  
提交时间:2019/04/22
THIN-FILM TRANSISTORS
HIGH-PERFORMANCE
LOW-TEMPERATURE
HYBRID FILMS
FABRICATION
DEPOSITION
CONSTANT
OXIDES
STACK
HFO2
Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature
期刊论文
Journal of Alloys and Compounds, 2017, 卷号: Vol.691, 页码: 504-513
作者:
Lv,J. G.
;
Jin,P.
;
Xiao,D. Q.
;
Zheng,C. Y.
;
Chen,X. S.
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  |  
浏览/下载:4/0
  |  
提交时间:2019/04/22
PULSED-LASER DEPOSITION
THERMAL-STABILITY
BAND ALIGNMENT
DIELECTRICS
SILICON
OXIDE
HFO2
SUBSTRATE
BARRIER
MEMORY
Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing
期刊论文
Journal of Alloys and Compounds, 2017, 卷号: Vol.704, 页码: 322-328
作者:
Lv,J. G.
;
Li,W. D.
;
Zheng,C. Y.
;
Zhu,L.
;
Liang,S.
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/04/22
ATOMIC LAYER DEPOSITION
BAND ALIGNMENT
HFO2
GAAS
DIELECTRICS
FILMS
GD
Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics
期刊论文
CERAMICS INTERNATIONAL, 2017, 卷号: Vol.43 No.3, 页码: 3101-3106
作者:
Li,W. D.
;
Jin,P.
;
Zhang,M.
;
Xiao,D. Q.
;
Fang,Z. B.
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/04/22
THIN-FILMS
INTERFACIAL PROPERTIES
HFO2 FILMS
MICROSTRUCTURE
EVAPORATION
NITRIDATION
DEPOSITION
Impact of native defects and impurities in m−HfO2 and β−Si3N4 on charge trapping memory devices: A first principle hybrid functional study.
期刊论文
Physica Status Solidi (B), 2017, 卷号: Vol.254 No.2
作者:
Lu,Wenjuan
;
Wang,Feifei
;
Dai,Yuehua
;
Jin,Bo
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  |  
浏览/下载:5/0
  |  
提交时间:2019/04/22
NONVOLATILE MEMORY
SILICON-NITRIDE
POINT-DEFECTS
HFO2
OXYGEN
PREDICTION
Physical mechanism of resistance switching in the co-doped RRAM
期刊论文
Journal of Semiconductors, 2017, 卷号: Vol.38 No.1, 页码: 014008
作者:
Chen,Junning
;
Wang,Feifei
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  |  
浏览/下载:11/0
  |  
提交时间:2019/04/22
ELECTROLYTE-BASED RERAM
CONDUCTIVE FILAMENTS
TI/HFO2 INTERFACE
MEMORY
OXIDE
PERFORMANCE
DEVICES
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