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	Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics
	Li,W. D.; Jin,P.; Zhang,M.; Xiao,D. Q.; Fang,Z. B.; Sun,Z. Q.; Liu,M.; Gao,J.; He,G.; Jiang,S. S.
刊名	CERAMICS INTERNATIONAL
	2017
卷号	Vol.43 No.3页码:3101-3106
关键词	THIN-FILMS INTERFACIAL PROPERTIES HFO2 FILMS MICROSTRUCTURE EVAPORATION NITRIDATION DEPOSITION
ISSN号	0272-8842
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2156216
专题	安徽大学
作者单位	1.Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China 2.Anhui Univ, Cooperat Innovat Res Ctr Weak Signal Detecting Ma, Hefei 230601, Peoples R China 3.Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Key Lab Mat Phys, Hefei 230031, Peoples R China 4.Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China
推荐引用方式 GB/T 7714	Li,W. D.,Jin,P.,Zhang,M.,et al. Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics[J]. CERAMICS INTERNATIONAL,2017,Vol.43 No.3:3101-3106.
APA	Li,W. D..,Jin,P..,Zhang,M..,Xiao,D. Q..,Fang,Z. B..,...&Jiang,S. S..(2017).Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics.CERAMICS INTERNATIONAL,Vol.43 No.3,3101-3106.
MLA	Li,W. D.,et al."Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfAlOX gate dielectrics".CERAMICS INTERNATIONAL Vol.43 No.3(2017):3101-3106.

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