QQ客服 官方微博 反馈留言

浏览/检索结果: 共13条，第1-10条 帮助 限定条件 专题：山东大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Reactive evaporation of SiOx films for passivation of GaN high-electron-mobility transistors 期刊论文 JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2019, 卷号: 129, 页码: 54-60 作者:  Zhu, Gengchang;  Liang, Guangda;  Zhou, Yang;  Chen, Xiufang;  Xu, Xiangang 收藏  |  浏览/下载：23/0  |  提交时间：2019/12/11 Reactive evaporation  SiOx  Passivation  GaN  HEMTs   Two-dimensional analytical model of AlGaN/GaN HEMTs with a etched algan barrier layer 期刊论文 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, 2019 作者:  Guo, Haijun;  Cao, Chao;  Duan, Baoxing 收藏  |  浏览/下载：10/0  |  提交时间：2019/12/11 AlGaN/GaN HEMTs  Analytical model  Electric field modulation   Two-Dimensional Analytical Model of AlGaN/GaN HEMTs with a Ftched AlGaN Barrier Layer 会议论文 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), JUN 12-14, 2019 作者:  Guo, Haijun;  Cao, Chao;  Duan, Baoxing 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/31 AlGaN/GaN HEMTs  analytical model  electric field modulation   The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation 期刊论文 APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2018, 卷号: 124, 期号: 4 作者:  Fu, Chen;  Lin, Zhaojun;  Cui, Peng;  Lv, Yuanjie;  Zhou, Yang 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/11 Deeply Supervised Depth Map Super-Resolution as Novel View Synthesis 期刊论文 IEEE Transactions on Circuits and Systems for Video Technology, 2018 作者:  Song X.;  Dai Y.;  Qin X. 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/11 Cameras  Color  Convolutional Neural Network  Deconvolution  Depth Map  DH-HEMTs  Novel View Synthesis  Spatial resolution  Super-Resolution  Task analysis   Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs 期刊论文 SCIENTIFIC REPORTS, 2018, 卷号: 8 作者:  Cui, Peng;  Lv, Yuanjie;  Fu, Chen;  Liu, Huan;  Cheng, Aijie 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11 GaN metal-oxide-semiconductor high-electron-mobility transistors using thermally evaporated SiO as the gate dielectric 期刊论文 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 卷号: 33, 期号: 9 作者:  Zhu, Gengchang;  Wang, Yiming;  Xin, Qian;  Xu, Mingsheng;  Chen, Xiufang 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/11 GaN  MOS-HEMTs  thermal evaporation  SiO   The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4surface passivation 期刊论文 Applied Physics A: Materials Science and Processing, 2018, 卷号: 124, 期号: 4 作者:  Fu, Chen;  Lin, Zhaojun;  Cui, Peng;  Lv, Yuanjie;  Zhou, Yang 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/11 Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs 期刊论文 CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9 作者:  Li, Jianfei;  Lv, Yuanjie;  Li, Changfu;  Ji, Ziwu;  Pang, Zhiyong 收藏  |  浏览/下载：10/0  |  提交时间：2019/12/11 AlGaN/GaN HEMT  Fe-doping  photoluminescence  leakage current   Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs 期刊论文 Chinese Physics B, 2017, 期号: 09, 页码: 519-523 作者:  Li JF(李建飞);  Lv YJ(吕元杰);  Li ZF(李长富);  Ji ZW(冀子武);  Pang ZY(庞智勇) 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/12 AlGaN/GaN HEMT  Fe-doping  photoluminescence  leakage current