| Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs | |
| Li, Jianfei; Lv, Yuanjie; Li, Changfu; Ji, Ziwu; Pang, Zhiyong; Xu, Xiangang; Xu, Mingsheng | |
| 刊名 | CHINESE PHYSICS B
 |
| 2017 | |
| 卷号 | 26期号:9 |
| 关键词 | AlGaN/GaN HEMT Fe-doping photoluminescence leakage current |
| DOI | 10.1088/1674-1056/26/9/098504 |
| URL标识 | 查看原文 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4585717 |
| 专题 | 山东大学 |
| 作者单位 | 1.Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China. 2.[Li, Jianfei 3.Lv, Yuanj |
| 推荐引用方式 GB/T 7714 | Li, Jianfei,Lv, Yuanjie,Li, Changfu,et al. Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs[J]. CHINESE PHYSICS B,2017,26(9). |
| APA | Li, Jianfei.,Lv, Yuanjie.,Li, Changfu.,Ji, Ziwu.,Pang, Zhiyong.,...&Xu, Mingsheng.(2017).Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs.CHINESE PHYSICS B,26(9). |
| MLA | Li, Jianfei,et al."Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs".CHINESE PHYSICS B 26.9(2017). |
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