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	Reactive evaporation of SiOx films for passivation of GaN high-electron-mobility transistors
	Zhu, Gengchang; Liang, Guangda; Zhou, Yang; Chen, Xiufang; Xu, Xiangang; Feng, Xianjin; Song, Aimin
刊名	JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
	2019
卷号	129页码:54-60
关键词	Reactive evaporation SiOx Passivation GaN HEMTs
DOI	10.1016/j.jpcs.2018.12.021
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4530081
专题	山东大学
作者单位	1.Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China. 2.[Zhu, Gengchang
推荐引用方式 GB/T 7714	Zhu, Gengchang,Liang, Guangda,Zhou, Yang,et al. Reactive evaporation of SiOx films for passivation of GaN high-electron-mobility transistors[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,2019,129:54-60.
APA	Zhu, Gengchang.,Liang, Guangda.,Zhou, Yang.,Chen, Xiufang.,Xu, Xiangang.,...&Song, Aimin.(2019).Reactive evaporation of SiOx films for passivation of GaN high-electron-mobility transistors.JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,129,54-60.
MLA	Zhu, Gengchang,et al."Reactive evaporation of SiOx films for passivation of GaN high-electron-mobility transistors".JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 129(2019):54-60.

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