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新疆理化技术研究所 [6]
北京大学 [5]
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清华大学 [3]
半导体研究所 [2]
长春应用化学研究所 [2]
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期刊论文 [28]
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Bias dependence of total ionizing dose effects in 22 nm bulk nFinFETs
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 177, 期号: 3-4, 页码: 372-382
作者:
Cui, X (Cui, Xu) [1] , [2] , [3]
;
Cui, JW (Cui, Jiang-Wei) [1] , [2] , [3]
;
Zheng, QW (Zheng, Qi-Wen) [1] , [2] , [3]
;
Wei, Y (Wei, Ying) [1] , [2] , [3]
;
Li, YD (Li, Yu-Dong) [1] , [2] , [3]
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2022/06/21
FinFET
1/f noise
TlD
CVS
bias dependence
Modeling and Mechanism of Enhanced Performance of In-Ga-Zn-O Thin-Film Transistors with Nanometer Thicknesses under Temperature Stress
期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2020, 卷号: 124, 期号: 41, 页码: 22793-22798
作者:
Dai, Chaoqi
;
Qi, Guoqiang
;
Qiao, Hai
;
Wang, Weiliang
;
Xiao, Han
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2020/12/16
HYSTERESIS
EXTRACTION
Influences of total ionizing dose on single event effect sensitivity in floating gate cells
期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 8, 页码: 086103
作者:
Zhao, Pei-Xiong
;
Liu, Tian-Qi
;
Ye, Bing
;
Luo, Jie
;
Sun, You-Mei
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2018/10/08
flash memories
heavy ions
synergistic effect
total ionizing dose
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927
作者:
Zheng, QW (Zheng, Qiwen)[ 1 ]
;
Cui, JW (Cui, Jiangwei)[ 1 ]
;
Lu, W (Lu, Wu)[ 1 ]
;
Guo, HX (Guo, Hongxia)[ 1 ]
;
Liu, J (Liu, Jie)[ 2 ]
收藏
  |  
浏览/下载:53/0
  |  
提交时间:2018/09/27
Charge Sharing
Single-event Upset (Seu)
Static Random Access Memory
Total Ionizing Dose (Tid)
An Amidine-Type n-Dopant for Solution-Processed Field-Effect Transistors and Perovskite Solar Cells
期刊论文
ADVANCED FUNCTIONAL MATERIALS, 2017, 卷号: 27, 期号: 41
作者:
Hu, Lin
;
Liu, Tiefeng
;
Duan, Jiashun
;
Ma, Xiaoyi
;
Ge, Congwu
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2018/01/15
Doping
1
Electron Transfer
8-diazabicyclo[5.4.0] Undec-7-ene (Dbu)
Field-effect Transistors
Perovskite Solar Cells
Total ionizing radiation effects of 2-T SONOS for 130 nm/4 Mb NOR flash memory technology
期刊论文
2016, 2016
QIAO FengYing
;
PAN LiYang
;
YU Xiao
;
MA HaoZhi
;
WU Dong
;
XU Jun
;
QIAO FengYing
;
PAN LiYang
;
YU Xiao
;
MA HaoZhi
;
WU Dong
;
XU Jun
收藏
  |  
浏览/下载:4/0
Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide
期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8, 页码: 1-6
作者:
Liu, Y (Liu Yuan)
;
Chen, HB (Chen Hai-Bo)
;
Liu, YR (Liu Yu-Rong)
;
Wang, X (Wang Xin)
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2018/01/25
SilicOn On Insulator
Ion implantatIon
Ionizing Radiation
Low Frequency Noise
Study on the response of InAs nanowire transistors to H2O and NO2
期刊论文
sensors and actuators b chemical, 2015
Zhang, Xiantong
;
Fu, Mengqi
;
Li, Xing
;
Shi, Tuanwei
;
Ning, Zhiyuan
;
Wang, Xiaoye
;
Yang, Tao
;
Chen, Qing
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2015/11/10
Gas sensing mechanism
InAs nanowire
Field effect transistor
NO2
H2O
FIELD-EFFECT TRANSISTORS
ELECTRONIC TRANSPORT
HYSTERESIS
GATE
ACCUMULATION
SURFACES
ARRAYS
LAYER
High reliability of vanadyl-phthalocyanine thin-film transistors using silicon nitride gate insulator
期刊论文
THIN SOLID FILMS, 2013, 卷号: 545, 页码: 514-516
作者:
Wang, Lijuan
;
Qin, Haitao
;
Zhang, Wei
;
Zhang, Long
;
Yan, Donghang
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2019/04/09
Organic Thin Film Transistors
Vanadyl-phthalocyanine
Silicon Nitride
Reliability
Threshold Voltage
High reliability of vanadyl-phthalocyanine thin-film transistors using silicon nitride gate insulator
期刊论文
thin solid films, 2013, 卷号: 545, 页码: 514-516
Wang LJ
;
Qin HT
;
Zhang W
;
Zhang L
;
Yan DH
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2014/04/15
FIELD-EFFECT TRANSISTORS
BIAS-STRESS
ORGANIC SEMICONDUCTOR
THRESHOLD VOLTAGE
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