Bias dependence of total ionizing dose effects in 22 nm bulk nFinFETs

doi:10.1080/10420150.2022.2039928

CORC > 新疆理化技术研究所 > 中国科学院新疆理化技术研究所 > 中国科学院特殊环境功能材料与器件重点试验室

	Bias dependence of total ionizing dose effects in 22 nm bulk nFinFETs
	Cui, X (Cui, Xu) [1] , [2] , [3]; Cui, JW (Cui, Jiang-Wei) [1] , [2] , [3]; Zheng, QW (Zheng, Qi-Wen) [1] , [2] , [3]; Wei, Y (Wei, Ying) [1] , [2] , [3]; Li, YD (Li, Yu-Dong) [1] , [2] , [3]; Guo, Q (Guo, Qi) [1] , [2] , [3]
刊名	RADIATION EFFECTS AND DEFECTS IN SOLIDS
	2022
卷号	177 期号:3-4 页码:372-382
关键词	FinFET 1/f noise TlD CVS bias dependence
ISSN号	1042-0150
DOI	10.1080/10420150.2022.2039928
英文摘要	The total ionizing dose response of 22nm bulk silicon nFinFETs with different bias conditions is investigated using Co-60 gamma-rays. The experimental results show that constant voltage stress (CVS) has an important effect on the electrical parameters of the devices. After the CVS experiment, the threshold voltage of the device shifts positively and the on-state current decreases. The threshold voltage of devices irradiated under ON bias and ON bias after CVS shifts positively, and the ON bias device has shown large degradation. The threshold voltages of devices irradiated under ALL0 bias and TG bias shift negatively. The on-state current of the device increases with the accumulation of irradiation dose. There is no significant change in the subthreshold swing and 1 /f noise power spectrum of the device after irradiation, indicating that the irradiation produces fewer interface traps and border traps
WOS记录号	WOS:000763214300001
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/8388]
专题	新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室
通讯作者	Cui, JW (Cui, Jiang-Wei) [1] , [2] , [3]; Zheng, QW (Zheng, Qi-Wen) [1] , [2] , [3]
作者单位	1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi, Peoples R China 2.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Device, Urumqi, Peoples R China 3.Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing, Peoples R China
推荐引用方式 GB/T 7714	Cui, X ,Cui, JW ,Zheng, QW ,et al. Bias dependence of total ionizing dose effects in 22 nm bulk nFinFETs[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS,2022,177(3-4):372-382.
APA	Cui, X ,Cui, JW ,Zheng, QW ,Wei, Y ,Li, YD ,&Guo, Q .(2022).Bias dependence of total ionizing dose effects in 22 nm bulk nFinFETs.RADIATION EFFECTS AND DEFECTS IN SOLIDS,177(3-4),372-382.
MLA	Cui, X ,et al."Bias dependence of total ionizing dose effects in 22 nm bulk nFinFETs".RADIATION EFFECTS AND DEFECTS IN SOLIDS 177.3-4(2022):372-382.