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Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
作者:  Shi K;  Jiao CM;  Song HP
收藏  |  浏览/下载:94/7  |  提交时间:2011/07/05
High Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates 期刊论文
applied surface science, 2008, 卷号: 255, 期号: 5, 页码: 3350-3353 part 2
Shang JZ; Zhang BP; Wu CM; Cai LE; Zhang JY; Yu JZ; Wang QM
收藏  |  浏览/下载:35/0  |  提交时间:2010/03/08
XPS  
Excitonic photoluminescence properties of nanocrystalline GaSb and Ga0.62In0.38Sb embedded in silica films 期刊论文
journal of luminescence, 2002, 卷号: 99, 期号: 3, 页码: 273-281
Liu FM; Wang TM; Zhang LD; Li GH; Han HX
收藏  |  浏览/下载:55/0  |  提交时间:2010/08/12
Identification of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy 期刊论文
vacuum, 1998, 卷号: 49, 期号: 2, 页码: 133-137
Wu Z; Huang D; Yang X; Wang J; Qin F; Zhang J; Yang Z
收藏  |  浏览/下载:36/0  |  提交时间:2010/08/12
A study of the interface of CeO2/Si heterostructure grown by ion beam deposition 期刊论文
vacuum, 1998, 卷号: 51, 期号: 3, 页码: 397-401
Wu ZL; Huang DD; Yang XZ
收藏  |  浏览/下载:38/0  |  提交时间:2010/08/12
Mechanism of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy 期刊论文
vacuum, 1998, 卷号: 49, 期号: 2, 页码: 139-143
Yang X; Wu Z; Zhao J; Wang H; Huang D; Qin F
收藏  |  浏览/下载:28/0  |  提交时间:2010/08/12
THE ADSORPTION OF O2 ON FESI SURFACES 期刊论文
surface science, 1992, 卷号: 269, 期号: 0, 页码: 1022-1031
HSU CC; DING SA; MA MS; WU JX; LIU XM; JI MR
收藏  |  浏览/下载:12/0  |  提交时间:2010/11/15


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