Identification of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy

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	Identification of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy
	Wu Z ; Huang D ; Yang X ; Wang J ; Qin F ; Zhang J ; Yang Z
刊名	vacuum
	1998
卷号	49 期号:2 页码:133-137
关键词	SPECTROSCOPY ENERGY
ISSN号	0042-207x
通讯作者	wu z,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china.
中文摘要	an anomalous behavior was observed in x-ray photoelectron spectroscopy (xps) depth profile measurements conducted on ceo2/si epilayers grown by ion beam epitaxy (ibe): the signals of ce3+ and ce4+ co-exist, and the ratio between them increases during the etching time and then tends to maintain a constant level before increasing again. the results of x-ray diffraction (xrd), auger electron spectroscopy (aes), and rutherford back-scattering (res) measurements proved that the reduction chemical reaction of ceo2 is induced by ion-etching. (c) 1998 elsevier science ltd. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13254]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wu Z,Huang D,Yang X,et al. Identification of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy[J]. vacuum,1998,49(2):133-137.
APA	Wu Z.,Huang D.,Yang X.,Wang J.,Qin F.,...&Yang Z.(1998).Identification of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy.vacuum,49(2),133-137.
MLA	Wu Z,et al."Identification of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy".vacuum 49.2(1998):133-137.