Mechanism of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy

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	Mechanism of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy
	Yang X ; Wu Z ; Zhao J ; Wang H ; Huang D ; Qin F
刊名	vacuum
	1998
卷号	49 期号:2 页码:139-143
关键词	SPECTROSCOPY
ISSN号	0042-207x
通讯作者	yang x,beijing normal univ,dept phys,beijing 100875,peoples r china.
中文摘要	in a search for the mechanism of the induced reduction reaction that occurred in x-ray photoelectron spectroscopy (xps) depth profiles measured experimentally on ceo2/si epilayers grown by ion beam epitaxy (ibe), several possibilities have been checked. the first possibility, that the x-ray induces the reaction, has been ruled out by experimentation. other possible models for the incident-ion induced reaction, one based on short-range interaction (direct collision) and the other based on long-range potential accompanied with the incident-ions, have been tested by simulation on computer. the results proved that the main mechanism is the former, not the latter. (c) 1998 elsevier science ltd. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13256]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yang X,Wu Z,Zhao J,et al. Mechanism of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy[J]. vacuum,1998,49(2):139-143.
APA	Yang X,Wu Z,Zhao J,Wang H,Huang D,&Qin F.(1998).Mechanism of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy.vacuum,49(2),139-143.
MLA	Yang X,et al."Mechanism of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy".vacuum 49.2(1998):139-143.