×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
北京大学 [14]
厦门大学 [2]
内容类型
其他 [16]
发表日期
2016 [1]
2012 [1]
2011 [3]
2010 [2]
2009 [1]
2008 [1]
更多...
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共16条,第1-10条
帮助
限定条件
内容类型:其他
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
AN EXPERIMENTAL AND ANALYTICAL METHOD TO OBSERVE THE POLYSILICON NANOWIRE MOSFET THRESHOLD VOLTAGE
其他
2016-01-01
Sheu, Gene
;
Yang, Shao-Ming
;
Aanand
;
Imam, Syed Sarwar
;
Jen, Fan Ming
;
Lu, Shao Wei
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2017/12/03
nanowire
undoped-polysilicon
native gate oxide
drain saturation current
back-gate
mean-free path
TRANSISTORS
TRANSPORT
New anti-windup scheme for uncertain linear system
其他
2012-01-01
Wang, Weijie
;
Huang, Chunqing
;
黄春庆
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2015/07/22
Fuzzy systems
Linear systems
Saturation (materials composition)
HCI and NBTI induced degradation in gate-all-around silicon nanowire transistors
其他
2011-01-01
Huang, Ru
;
Wang, Runsheng
;
Liu, Changze
;
Zhang, Liangliang
;
Zhuge, Jing
;
Tao, Yu
;
Zou, Jibin
;
Liu, Yuchao
;
Wang, Yangyuan
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection
其他
2011-01-01
Ma, Chenyue
;
Zhang, Lining
;
Zhang, Chenfei
;
Zhang, Xiufang
;
He, Jin
;
Zhang, Xing
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2017/12/03
Available Data Packet Size Policy for Unsolicited Grant Service in the Power Saving Multi-channel MAC Protocol
其他
2011-01-01
Gao, Zilong
;
Huang, Lianfen
;
Wang, Jing
;
Yao, Yan
;
黄联芬
;
姚彦
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/07/22
Precipitation Transformation in Rainfall-induced Landslide Forecasting
其他
2010-01-01
Wu, Xiaojuan
;
Tian, Yuan
;
Wu, Lun
;
Jia, Guiyun
;
Xiao, Chenchao
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/11/16
precipitation transformation
landslide forecasting model
regional rainfall-induced landslide
GIS
A Unified Drain Current Model for Nanoscale Double-Gate and Surrounding-Gate MOSFETs Incorporating Velocity Saturation
其他
2010-01-01
Zhang, Lining
;
Zhou, Xingye
;
Xu, Yiwen
;
Chen, Lin
;
Zhou, Wang
;
Li, Yingxue
;
He, Frank
;
Chan, Mansun
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/13
A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs
其他
2009-01-01
He, Jin
;
Zhang, Lining
;
Zhang, Jian
;
Ma, Chenyue
;
Liu, Feilong
;
Chan, Mansun
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/10
non-classical MOS transistor
surrounding-gate MOSFETs
device physics
surface potential model
non-charge-sheet approximation
MOS-TRANSISTOR
CHARGE
PERFORMANCE
A complete analytic surface potential-based core model for undoped cylindrical surrounding-gate MOSFETs
其他
2008-01-01
Jin, He
;
Jian, Zhang
;
Lining, Zhang
;
Chenyue, Ma
;
Mansun, Chan
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2015/11/13
A unified carrier-based model for symmetric Double-Gate and Surrounding-Gate MOS transistors
其他
2007-01-01
He, Jin
;
Bian, Wei
;
Tao, Yadong
;
Liu, Feng
;
Zhang, Xing
;
Wu, Wen
;
Wang, Ting
;
Chan, Mansun
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/10
©版权所有 ©2017 CSpace - Powered by
CSpace