| A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs | |
| He, Jin ; Zhang, Lining ; Zhang, Jian ; Ma, Chenyue ; Liu, Feilong ; Chan, Mansun | |
| 2009 | |
| 关键词 | non-classical MOS transistor surrounding-gate MOSFETs device physics surface potential model non-charge-sheet approximation MOS-TRANSISTOR CHARGE PERFORMANCE |
| 英文摘要 | An analytic surface potential-based non-charge-sheet core model for intrinsic nanowire surrounding-gate (SRG) MOSFETs is presented in this paper. Starting from the Poisson-Boltzmann equation in the cylindrical SRG MOSFETs, a surface potential equation is derived. Based on the exact surface potential solutions evaluated at the source and drain ends, a single set of the analytic drain current expression is obtained from the Pao-Sah's dual integral without the charge-sheet approximation. The analytical trans-capacitance model is also obtained from Ward-Dutton's charge partition method within the surface potential-based model framework. It is shown that the proposed drain current model and trans-capacitance model are valid for all operation regions, allowing the nanowire SRG MOSFET characteristics to be adequately described from the linear to saturation and from the sub-threshold to strong inversion region without any fitting-parameters. Moreover, the model prediction is verified by the three-dimensional numerical simulation.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000265368700009&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Chemistry, Physical; Physics, Atomic, Molecular & Chemical; SCI(E); EI; CPCI-S(ISTP); 1 |
| 语种 | 英语 |
| DOI标识 | 10.1080/08927020802706995 |
| 内容类型 | 其他 |
| 源URL | [http://ir.pku.edu.cn/handle/20.500.11897/152844]  |
| 专题 | 信息科学技术学院 |
| 推荐引用方式 GB/T 7714 | He, Jin,Zhang, Lining,Zhang, Jian,et al. A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs. 2009-01-01. |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论